参数资料
型号: MX1N6506
厂商: MICROSEMI CORP-SCOTTSDALE
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE
封装: HERMETIC SEALED, CERAMIC, DIP-14
文件页数: 2/2页
文件大小: 80K
代理商: MX1N6506
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6506
SYMBOLS & DEFINITIONS
Symbol
DEFINITION
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature
IFSM
Forward Surge Current: The peak forward surge current at a specified pulse width
Ct
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads
SCHEMATIC
PACKAGE DIMENSIONS
CIRCUIT
Supply rail (+VCC)
GND (or -VCC)
Steering Diode Application
FIGURE 1
I/O Port
Microsemi
Scottsdale Division
Page 2
Copyright
2006
5-1-2006 REV D
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关PDF资料
PDF描述
MQ1N6506 UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE
MX1V-T1K38.400KHZ+/-30PPM10PF QUARTZ CRYSTAL RESONATOR, 0.0384 MHz
MX1V-T1N65.536KHZ+/-30PPM10PF QUARTZ CRYSTAL RESONATOR, 0.065536 MHz
MX1V-T1N38.400KHZ+/-30PPM10PF QUARTZ CRYSTAL RESONATOR, 0.0384 MHz
MX1V-T1K77.500KHZ+/-30PPM10PF QUARTZ CRYSTAL RESONATOR, 0.0775 MHz
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