参数资料
| 型号： | MXD1210CSA-T |
| 厂商： | Maxim Integrated |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR NV RAM CMOS LOPWR 8SOIC |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 控制器类型： | 非易失性 RAM |
| 电源电压： | 4.75 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
General Description
The MXD1210 nonvolatile RAM controller is a very low-
power CMOS circuit that converts standard (volatile)
CMOS RAM into nonvolatile memory. It also continually
monitors the power supply to provide RAM write protec-
tion when power to the RAM is in a marginal (out-of-tol-
erance) condition. When the power supply begins to
fail, the RAM is write-protected, and the device switch-
es to battery-backup mode.
Applications
Microprocessor Systems
Computers
Embedded Systems
Features
Battery Backup
Memory Write Protection
230A Operating Mode Quiescent Current
2nA Backup Mode Quiescent Current
Battery Freshness Seal
Optional Redundant Battery
Low Forward-Voltage Drop on VCC Supply Switch
5% or 10% Power-Fail Detection Options
Tests Battery Condition During Power-Up
8-Pin SO Available
MXD1210
Nonvolatile RAM Controller
________________________________________________________________
Maxim Integrated Products
1
8
VCCI
+5V
1
2
7
VBATT2
6
3
5
4
GND
CE
VCC
CMOS
RAM
MXD1210
CE
FROM
DECODER
VBATT1
VCCO
PART
TEMP RANGE
PIN-PACKAGE
MXD1210C/D
0°C to +70°C
Dice*
MXD1210CPA
0°C to +70°C
8 PDIP
MXD1210CSA
0°C to +70°C
8 SO
MXD1210CWE
0°C to +70°C
16 Wide SO
MXD1210EPA
-40°C to +85°C
8 PDIP
MXD1210ESA
-40°C to +85°C
8 SO
MXD1210EWE
-40°C to +85°C
16 Wide SO
MXD1210MJA
-55°C to +125°C
8 CERDIP
Typical Operating Circuit
Ordering Information
CEO
CE
GND
1
2
8
7
VCCI
VBATT2
VBATT1
TOL
VCCO
DIP/SO
TOP VIEW
3
4
6
5
MXD1210
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
N.C.
VCCI
N.C.
VBATT2
N.C.
CEO
N.C.
CE
MXD1210
WIDE SO
VCCO
N.C.
TOL
VBATT1
N.C.
GND
Pin Configurations
19-0154; Rev 2; 11/05
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
*
Contact factory for dice specifications.
Devices in PDIP and SO packages are available in both lead-
ed and lead-free packaging. Specify lead free by adding the +
symbol at the end of the part number when ordering. Lead free
not available for CERDIP package.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MXD1210CWE | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MXD1210CWE+ | 功能描述:IC CNTRLR NVRAM 16-SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| MXD1210CWE+T | 功能描述:IC CNTRLR NVRAM 16-SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| MXD1210CWE-T | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MXD1210EPA | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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