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参数资料
| 型号： | MXLSMBJ2K4.0E3 |
| 厂商： | MICROSEMI CORP-IRELAND |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 2000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 306K |
| 代理商： | MXLSMBJ2K4.0E3 |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
RF01019 Rev A, November 2010
High Reliability Product Group
Page 1 of 4
DEVICES
MSMBJ2K3.0 thru MSMBJ2K5.0, e3
MSMBG2K3.0 thru MSMBG2K5.0,e3
LEVELS
M, MA, MX, MXL
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Suppresses transients up to 2 kW @ 8/20 s
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to MicroNote 129 for more details on the screening options.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
3σ lot norm screening performed on Standby Current ID
APPLICATIONS / BENEFITS
Voltage and reverse (leakage) current lowest available
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
Protection from switching transients & induced RF
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance for Class 1
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 C: 2000 W @ 8/20 s or 300 W @ 10/1000 s
with impulse repetition rate (duty factor) of 0.01 maximum (also see Figure 1 and 4)
Steady-state power dissipation: 5 Watts @ TL ≤ 25 °C or 1.38 Watts at TA = 25 °C when
mounted on FR4 PC board with recommended footprint
Tclamping (0 Volts to VBR min.): <100 ps
Operating and Storage temperatures: -65°C to +150°C
Forward Voltage @ 25 °C: 3.5 Volts maximum @ 30 Amp peak impulse of 8.3 ms half-sine
wave (unidirectional only)
Solder temperatures: 260 °C for 10 s (maximum)
Surface Mount 2 kW
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional construction
- Available in both J-bend and Gull-wing terminations
- Selections for 3 V to 5 V standoff voltages (VWM)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MXLSMBJ2K5.0 | 功能描述:TVS DIODE 5VWM 7.6VC DO214AA 制造商:microsemi ire division 系列:军用，MIL-PRF-19500 包装:散装 零件状态:上次购买时间 类型:齐纳 单向通道:1 双向通道:- 电压 - 反向关态（典型值）:5V 电压 - 击穿（最小值）:5.9V 电压 - 箝位（最大值）@ Ipp:7.6V 电流 - 峰值脉冲（10/1000μs）:10A（8/20μs） 功率 - 峰值脉冲:2000W（2kW） 电源线路保护:无 应用:通用 不同频率时的电容:- 工作温度:-65°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:DO-214AA，SMB 供应商器件封装:SMBJ（DO-214AA） 标准包装:1 |
| MXLSMBJ2K5.0E3 | 功能描述:TVS DIODE 5VWM 7.6VC DO214AA 制造商:microsemi ire division 系列:军用，MIL-PRF-19500 包装:散装 零件状态:上次购买时间 类型:齐纳 单向通道:1 双向通道:- 电压 - 反向关态（典型值）:5V 电压 - 击穿（最小值）:5.9V 电压 - 箝位（最大值）@ Ipp:7.6V 电流 - 峰值脉冲（10/1000μs）:10A（8/20μs） 功率 - 峰值脉冲:2000W（2kW） 电源线路保护:无 应用:通用 不同频率时的电容:- 工作温度:-65°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:DO-214AA，SMB 供应商器件封装:SMBJ（DO-214AA） 标准包装:1 |
| MXLSMBJ30A | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
| MXLSMBJ30AE3 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
| MXLSMBJ30CA | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
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