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| 型号： | MXLSMBJSAC12E3 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 525K |
| 代理商： | MXLSMBJSAC12E3 |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
RF01021 Rev A, October 2010
High Reliability Product Group
Page 1 of 4
DEVICES
MSMBJSAC5.0 thru MSMBJSAC75, e3
LEVELS
M, MA, MX, MXL
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Optional up screening available by replacing the M prefix with MA, MX or MXL.
These
prefixes specify various screening and conformance inspection options based on
MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options
Low capacitance performance of 30pF
Suppresses transients up to 500 W Peak Pulse Power @ 10/1000
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices ava
ilable by adding an “e3” suffix
3σ lot norm screening performed on Standby Current ID
APPLICATIONS / BENEFITS
Low Capacitance for data-line protection to 10 MHz
Protection for aircraft fast data rate lines per select waveforms in RTCA/DO-160F (see
MicroNote 130 for Waveform 4 and 5A capability) & ARINC 429 with bit rates of 100 kb/s (per
ARINC 429, Part 1, par. 2.4.1.1)
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
o
Class 1: MSMBJSAC5.0 to MSMBJSAC75
o
Class 2: MSMBJSAC5.0 to MSMBJSAC45
o
Class 3: MSMBJSAC5.0 to MSMBJSAC22
o
Class 4: MSMBJSAC5.0 to MSMBJSAC10
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance
o
Class 1: MSMBJSAC5.0 to MSMBJSAC26
o
Class 2: MSMBJSAC5.0 to MSMBJSAC15
o
Class 3: MSMBJSAC5.0 to MSMBJSAC7.0
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 C: 5
00 watts at 10/1000 μs with impulse repetition rate
(duty factor) of 0.01 % or less*
tclamping (0 volts to VBR min.): < 5 ns theoretical for unidirectional
Operating and Storage temperature: -65 °C to +150 °C
Steady-State Power dissipation*: 2.5 watts at TL = +75 C
Solder temperatures: 260 C for 10 s (maximum)
* TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff
voltage) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region) of the
TVS element.
Also see Figures 5 and 6 for further protection details in rated peak pulse power for
unidirectional and bidirectional configurations respectively.
DO-214AA
SURFACE MOUNT
500 Watt Low Capacitance
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional construction
- Available J-bend termination
- Selections for 5.0 to 75 V standoff voltages (VWM)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MXLSMBJSAC15 | 制造商:Microsemi Corporation 功能描述:TVS DIODE 15VWM 23.6VC DO214AA |
| MXLSMBJSAC15E3 | 功能描述:TVS DIODE 15VWM 23.6VC DO214AA 制造商:microsemi ire division 系列:军用，MIL-PRF-19500 包装:散装 零件状态:在售 类型:齐纳 单向通道:1 双向通道:- 电压 - 反向关态（典型值）:15V 电压 - 击穿（最小值）:16.7V 电压 - 箝位（最大值）@ Ipp:23.6V 电流 - 峰值脉冲（10/1000μs）:20A 功率 - 峰值脉冲:500W 电源线路保护:无 应用:通用 不同频率时的电容:30pF @ 1MHz 工作温度:-65°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:DO-214AA，SMB 供应商器件封装:SMBJ（DO-214AA） 标准包装:1 |
| MXLSMBJSAC18 | 功能描述:TVS DIODE 18VWM 28.8VC DO214AA 制造商:microsemi ire division 系列:军用，MIL-PRF-19500 包装:散装 零件状态:在售 类型:齐纳 单向通道:1 双向通道:- 电压 - 反向关态（典型值）:18V 电压 - 击穿（最小值）:20V 电压 - 箝位（最大值）@ Ipp:28.8V 电流 - 峰值脉冲（10/1000μs）:15A 功率 - 峰值脉冲:500W 电源线路保护:无 应用:通用 不同频率时的电容:30pF @ 1MHz 工作温度:-65°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:DO-214AA，SMB 供应商器件封装:SMBJ（DO-214AA） 标准包装:1 |
| MXLSMBJSAC18E3 | 功能描述:TVS DIODE 18VWM 28.8VC DO214AA 制造商:microsemi ire division 系列:军用，MIL-PRF-19500 包装:散装 零件状态:在售 类型:齐纳 单向通道:1 双向通道:- 电压 - 反向关态（典型值）:18V 电压 - 击穿（最小值）:20V 电压 - 箝位（最大值）@ Ipp:28.8V 电流 - 峰值脉冲（10/1000μs）:15A 功率 - 峰值脉冲:500W 电源线路保护:无 应用:通用 不同频率时的电容:30pF @ 1MHz 工作温度:-65°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:DO-214AA，SMB 供应商器件封装:SMBJ（DO-214AA） 标准包装:1 |
| MXLSMBJSAC22 | 功能描述:TVS DIODE 22VWM 35.4VC DO214AA 制造商:microsemi ire division 系列:军用，MIL-PRF-19500 包装:散装 零件状态:在售 类型:齐纳 单向通道:1 双向通道:- 电压 - 反向关态（典型值）:22V 电压 - 击穿（最小值）:24.4V 电压 - 箝位（最大值）@ Ipp:35.4V 电流 - 峰值脉冲（10/1000μs）:14A 功率 - 峰值脉冲:500W 电源线路保护:无 应用:通用 不同频率时的电容:30pF @ 1MHz 工作温度:-65°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:DO-214AA，SMB 供应商器件封装:SMBJ（DO-214AA） 标准包装:1 |
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