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参数资料
| 型号： | MXLSMBJSAC6.0E3 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 3/4页 |
| 文件大小： | 525K |
| 代理商： | MXLSMBJSAC6.0E3 |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
RF01021 Rev A, October 2010
High Reliability Product Group
Page 3 of 4
ELECTRICAL CHARACTERISTICS @ 25oC
MICROSEMI PART
NUMBER
REVERSE
STAND-OFF
VOLTAGE
(Note 1)
VWM
Volts
BREAKDOWN
VOLTAGE
@ I(BR) 1.0mA
V(BR)
Volts
Min.
MAXIMUM
STANDBY
CURRENT
@VWM
ID
A
MAXIMUM
CLAMPING
VOLTAGE
IP = 5.0A*
VC
Volts
MAXIMUM
PEAK PULSE
CURRENT*
RATING
IPP
Amps
MAXIMUM
CAPACITANCE
@ O Volts,
f=1 MHz
pF
WORKING
INVERSE
BLOCKING
VOLTAGE
VWIB
Volts
INVERSE
BLOCKING
LEAKAGE
CURRENT
IIB @ VWIB
A
PEAK INVERSE
BLOCKING
VOLTAGE
VPIB
Volts
MSMBJSAC5.0
MSMBJSAC6.0
5.0
6.0
7.60
7.90
300
10.0
11.2
44
41
30
75
10
100
MSMBJSAC7.0
MSMBJSAC8.0
7.0
8.0
8.33
8.89
300
100
12.6
13.4
38
36
30
75
10
100
MSMBJSAC8.5
MSMBJSAC10
8.5
10
9.44
11.10
50
5.0
14.0
16.3
34
29
30
75
10
100
MSMBJSAC12
MSMBJSAC15
12
15
13.30
16.70
5.0
19.0
23.6
25
20
30
75
10
100
MSMBJSAC18
MSMBJSAC22
18
22
20.00
24.40
5.0
28.8
35.4
15
14
30
75
10
100
MSMBJSAC26
MSMBJSAC36
26
36
28.90
40.0
5.0
42.3
60.0
11.1
8.6
30
75
10
100
MSMBJSAC45
MSMBJSAC50
45
50
50.00
55.50
5.0
77.0
88.0
6.8
5.8
30
150
10
200
MSMBJSAC75
75
83.3
5.0
121
4.1
30
150
10
200
*See Figure 3. For the MSMBJSAC75, the maximum clamping voltage VC is at the maximum rated Peak Pulse Current (IPP) of 4.1 Amps.
Clamping Factor: The ratio of the numerical value of VC to V(BR) is typically 1.4 @ full rated power, 1.20 @ 50% rated power. Also see MicroNote 108.
Note 1: A transient voltage suppressor is normally selected according to voltage (VWM), that should be equal to or greater than the dc or continuous peak
operating voltage level.
Note 2: When pulse testing, test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein.
GRAPHS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MXLSMBJSAC7.0 | 制造商:Microsemi Corporation 功能描述:TVS DIODE 7VWM 12.6VC DO214AA 制造商:Microsemi Corporation 功能描述:TVS 500W UNIDIRECT DO-214AA |
| MXLSMBJSAC7.0E3 | 制造商:Microsemi Corporation 功能描述:TVS DIODE 7VWM 12.6VC DO214AA 制造商:Microsemi Corporation 功能描述:TVS 500W UNIDIRECT DO-214AA |
| MXLSMBJSAC75 | 功能描述:TVS DIODE 75VWM 121VC DO214AA 制造商:microsemi ire division 系列:军用，MIL-PRF-19500 包装:散装 零件状态:在售 类型:齐纳 单向通道:1 双向通道:- 电压 - 反向关态（典型值）:75V 电压 - 击穿（最小值）:83.3V 电压 - 箝位（最大值）@ Ipp:121V 电流 - 峰值脉冲（10/1000μs）:4.1A 功率 - 峰值脉冲:500W 电源线路保护:无 应用:通用 不同频率时的电容:30pF @ 1MHz 工作温度:-65°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:DO-214AA，SMB 供应商器件封装:SMBJ（DO-214AA） 标准包装:1 |
| MXLSMBJSAC75E3 | 制造商:Microsemi Corporation 功能描述:TVS DIODE 75VWM 121VC DO214AA |
| MXLSMBJSAC8.0 | 功能描述:TVS DIODE 8VWM 13.4VC DO214AA 制造商:microsemi ire division 系列:军用，MIL-PRF-19500 包装:散装 零件状态:在售 类型:齐纳 单向通道:1 双向通道:- 电压 - 反向关态（典型值）:8V 电压 - 击穿（最小值）:8.89V 电压 - 箝位（最大值）@ Ipp:13.4V 电流 - 峰值脉冲（10/1000μs）:36A 功率 - 峰值脉冲:500W 电源线路保护:无 应用:通用 不同频率时的电容:30pF @ 1MHz 工作温度:-65°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:DO-214AA，SMB 供应商器件封装:SMBJ（DO-214AA） 标准包装:1 |
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