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| 型号： | MXLSMCJ110AE3TR |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 345K |
| 代理商： | MXLSMCJ110AE3TR |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
RF01001 Rev A, June 2010
High Reliability Product Group
Page 4 of 4
GRAPHS
(Waveform
– See Figure 2)
Non-repetitive
(P
PP
)
–
P
e
a
k
P
u
ls
e
P
o
w
e
r
-
kW
100
10
1.0
0
tp
– Pulse Time – sec
FIGURE 1
– Peak Pulse Power vs. Pulse Time
Test waveform parameters
tr = 10s, tp = 1000s
FIGURE 2
– Pulse Waveform
C
a
p
a
c
it
a
n
c
e
in
p
F
P
e
a
k
P
u
ls
e
P
o
w
e
r
(P
PP
)
o
r
c
o
n
tin
u
o
u
s
P
o
w
e
r
in
P
e
rc
e
n
t
o
f
2
5
o C
R
a
ting
TL Lead Temperature
oC
FIGURE 3
– Derating Curve
Breakdown Voltage in Volts
FIGURE 4
– Typical Capacitance vs. Breakdown
1s
10s
100s
1ms
10 ms
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