- 您现在的位置：买卖IC网 > PDF目录240914 > MXLSMCJ130AE3TR (MICROSEMI CORP-SCOTTSDALE) 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB PDF资料下载
参数资料
| 型号： | MXLSMCJ130AE3TR |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 345K |
| 代理商： | MXLSMCJ130AE3TR |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
RF01001 Rev A, June 2010
High Reliability Product Group
Page 2 of 4
MECHANICAL AND PACKAGING
Void-free transfer molded thermosetting epoxy body meeting UL94V-0
Gull-wing or J-bend tin-lead (90 % Sn, 10 % Pb) or RoHS (100 % Sn) compliant annealed matte-tin plating
solderable per MIL-STD-750, method 2026
Cathode indicated by band. No cathode band on bi-directional devices.
Part number marked on package
Available in bulk or custom tape-and-reel packaging
TAPE-AND-REEL option available with up to 750 devices on 7 inch reel or up to 2500 devices on 13 inch reel per
EIA-481-1-A with 12 mm tape.
Add “TR” suffix to part number.
Weight: 0.25 grams (approximately)
PACKAGE DIMENSIONS
PAD LAYOUT
DIMENSIONS IN INCHES
A
B
C
D
E
F
K
L
MIN
.115
.260
.220
.305
.077
.380
.025
.030
MAX
.121
.280
.245
.320
.104
.400
.040
.060
DIMENSIONS IN MILLIMETERS
MIN
2.92
6.60
5.59
7.75
1.95
9.65
0.635
.760
MAX
3.07
7.11
6.22
8.13
2.65
10.16
1.016
1.520
Typical Standoff Height: 0.004” – 0.008” (0.1mm – 0.2mm)
INCHES
mm
A
0.390
9.90
B
0.110
2.79
C
0.150
3.81
SMCJ (DO-214AB)
INCHES
mm
A
0.510
12.95
B
0.110
2.79
C
0.150
3.81
SMCG (DO-215AB)
SYMBOLS & DEFINITIONS
Symbol
Definition
Symbol
Definition
VWM
Working Peak (Standoff) Voltage
IPP
Peak Pulse Current
PPP
Peak Pulse Power
VC
Clamping Voltage
VBR
Breakdown Voltage
IBR
Breakdown Current for VBR
ID
Standby Current
(DO-214AB)
(DO-215AB)
SMCJ
SMCG
相关PDF资料 |
PDF描述 |
|---|---|
| MXLSMCJ130ATR | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| MXLSMCJ130A | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| MXLSMCJ13AE3 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| MXLSMCJ13AE3TR | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| MXLSMCJ13CAE3 | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MXLSMCJ130CA | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk 制造商:Microsemi Corporation 功能描述:TVS DIODE 130VWM 209VC DO214AB |
| MXLSMCJ130CAE3 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
| MXLSMCJ13A | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
| MXLSMCJ13AE3 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
| MXLSMCJ13CA | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
发布紧急采购，3分钟左右您将得到回复。