参数资料
型号: MXSMCJLCE8.0AE3TR
厂商: MICROSEMI CORP-SCOTTSDALE
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封装: PLASTIC PACKAGE-2
文件页数: 3/4页
文件大小: 222K
代理商: MXSMCJLCE8.0AE3TR
1500 WATT LOW CAPACITANCE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMCGLCE6.5 thru SMCGLCE170A, e3
SMCJLCE6.5 thru SMCJLCE170A, e3
SMCGLCE/SMCJLCE,
e3
GRAPHS
P
PP
Peak
Pulse
Power
kW
Test wave form
parameterxs
tr = 10 μs
tp = 1000 μs
tp – Pulse Time – sec
FIGURE 2 PULSE WAVEFORM
FIGURE 1 PEAK PULSE POWER vs. PULSE TIME
T – Temperature –
oC
Peak
Pulse
Power
(P
PP
)or
C
u
rr
e
n
t(I
PP
)
in
percent
of
25
o C
rating
FIGURE 3 DERATING CURVE
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where random
high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a
low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating
than the TVS clamping voltage VC. The Microsemi recommended rectifier part number for the application in Figure 5 is the “SMBJLCR80” or
“SMBGLCR80” depending on the terminal configuration desired. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional
applications, this added protective feature for both directions (including the reverse of each rectifier diode) is inherently provided in Figure 6. The
unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4.
FIGURE 4
FIGURE 5
FIGURE 6
TVS with internal low
Optional Unidirectional
Optional Bidirectional
capacitance rectifier diode
configuration (TVS and
configuration (two TVS
separate rectifier diode)
devices in anti-parallel)
Microsemi
Scottsdale Division
Page 3
in parallel)
Copyright
2009
2-11-2009 REV J
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关PDF资料
PDF描述
MBRB20H45CT-E3/81 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRB750-E3/81 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRF735-E3/45 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC
MQ1EZ130D10TR 130 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL
MQ1EZ200DE3 200 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL
相关代理商/技术参数
参数描述
MXSMCJLCE80ATR 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:1500 WATT LOW CAPACITANCE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
MXSMCJLCE80TR 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:1500 WATT LOW CAPACITANCE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
MXSMCJLCE9.0A 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk
MXSMCJLCE-9.0A 制造商:Microsemi Corporation 功能描述:BAE - Bulk
MXSMCJLCE9.0A/TR 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 9V 1.5KW 2PIN DO-214AB - Tape and Reel