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参数资料
| 型号： | MXUPS120E3 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-216AA |
| 封装： | ROHS COMPLIANT, PLASTIC, POWERMITE, 2 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 526K |
| 代理商： | MXUPS120E3 |
UPS120e3
1.0 A Schottky Barrier Rectifier
CHARTS AND GRAPHS
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FIGURE 1
FIGURE 2
Forward Power Dissipation
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this
device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse
power effects. The allowable operating TJ may be calculated from the equation:
UU
PP
SS
11
44
00
EE
33
TJ = TJ max = r(t)(Pf+Pr) where
r(t) = thermal impedance under given conditions.
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as
TJ = TJ max-r(t) Pr, Where r(t)=Rthja. For other power applications further calculations must be performed.
Microsemi
Copyright
2007
6-26-2007 Rev C
Page 3
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