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参数资料
| 型号： | N02L63W3AB25IT |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 2MBIT 3V LP 48-BGA |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 2,500 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 2M (128K x 16) |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 2.3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-LFBGA |
| 供应商设备封装： | 48-BGA（6x8） |
| 包装： | 带卷 (TR) |
N02L63W3A
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16bit
Overview
The N02L63W3A is an integrated memory device
containing a 2 Mbit Static Random Access Memory
organized as 131,072 words by 16 bits. The device
is designed and fabricated using ON
Semiconductor ’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N02L63W3A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40 o C to +85 o C and is
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs.
Features
? Single Wide Power Supply Range
2.3 to 3.6 Volts
? Very low standby current
2.0μA at 3.0V (Typical)
? Very low operating current
2.0mA at 3.0V and 1μs (Typical)
? Very low Page Mode operating current
0.8mA at 3.0V and 1μs (Typical)
? Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
? Low voltage data retention
Vcc = 1.8V
? Very fas t output enable access time
30ns OE access time
? Automatic power down to standby mode
? TTL compatible three-state output driver
? Compact space saving BGA package avail-
able
Product Family
Part Number
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby Operating
Current (I SB ), Current (Icc),
Typical Typical
N02L63W3AB
48 - BGA
-40 o C to +85 o C 2.3V - 3.6V 70ns @ 2.3V
N02L63W3AT
N02L63W3AB2
44 - TSOP II
48 - BGA Green
55ns @ 2.7V
2 μ A
2 mA @ 1MHz
N02L63W3AT2
44 - TSOP II Green
?2008 SCILLC. All rights reserved.
July 2008 - Rev. 15
Publication Order Number:
N02L63W3A/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| N02L63W3AB5I | 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| N02L63W3AB5IT | 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| N02L63W3AT25I | 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| N02L63W3AT25IT | 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| N02L63W3AT5I | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ?? 16bit |
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