参数资料
型号: N02L83W2AT25I
厂商: ON Semiconductor
文件页数: 4/10页
文件大小: 0K
描述: IC SRAM 2MBIT 70NS 32TSOP
产品变化通告: Product Obsolescence 14/Apr/2010
标准包装: 156
格式 - 存储器: RAM
存储器类型: SRAM - 异步
存储容量: 2M (256K x 8)
速度: 70ns
接口: 并联
电源电压: 2.3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 32-LFSOP(0.724",18.40mm 宽)
供应商设备封装: 32-TSOP I
包装: 托盘
其它名称: 766-1036
N02L83W2A
Power Savings with Page Mode Operation (WE = V IH )
Page Address (A4 - A17)
Open page
Word Address (A0 - A3)
Word 1
Word 2
...
Word 16
CE1
CE2
OE
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Rev. 8 | Page 4 of 10 | www.onsemi.com
相关PDF资料
PDF描述
RCB106DHRD-S621 CONN EDGECARD EXTEND 212POS .050
T95R226M050ESAS CAP TANT 22UF 50V 20% 2824
5788801-2 CONN D-SUB RCPT R/A 25POS
VE-J3F-CX-S CONVERTER MOD DC/DC 72V 75W
TPSC156K035R0350 CAP TANT 15UF 35V 10% 2312
相关代理商/技术参数
参数描述
N02L83W2AT25IT 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 8 bit
N02L83W2AT5I 功能描述:静态随机存取存储器 2MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
N02L83W2AT5IT 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 8 bit
N02M0818L1A 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
N02M0818L1AD 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit