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| 型号： | N04L63W2AT27IT |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 3V LP 44-TSOP |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 4M (256K x 16) |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 2.3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 44-TSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 44-TSOP II |
| 包装： | 带卷 (TR) |
N04L63W2A
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 16 bit
Overview
The N04L63W2A is an integrated memory device
containing a 4 Mbit Static Random Access Memory
organized as 262,144 words by 16 bits. The device
is designed and fabricated using ON
Semiconductor ’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N04L63W2A is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40 o C to +85 o C and is
available in JEDEC standard packages compatible
with other standard 256Kb x 16 SRAMs
Features
? Single Wide Power Supply Range
2.3 to 3.6 Volts
? Very low standby current
4.0μA at 3.0V (Typical)
? Very low operating current
2.0mA at 3.0V and 1μs (Typical)
? Very low Page Mode operating current
0.8mA at 3.0V and 1μs (Typical)
? Simple memory control
Dual Chip Enables (CE1 and CE2)
Output Enable (OE) for memory expansion
? Low voltage data retention
Vcc = 1.8V
? Very fas t output enable access time
25ns OE access time
? Automatic power down to standby mode
? TTL compatible three-state output driver
? Compact space saving BGA package avail-
able
Product Family
Part Number
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Options
Standby Operating
Current (I SB ), Current (Icc),
Typical Typical
N04L63W2AB
48 - BGA
-40 o C to +85 o C 2.3V - 3.6V 55ns @ 2.7V
N04L63W2AT
N04L63W2AB2
44 - TSOP II
48 - BGA Green
70ns @ 2.7V
4 μ A
2 mA @ 1MHz
N04L63W2AT2
44 - TSOP II Green
A 17
Pin Configuration
A 4 1 PIN 44 A 5
A 3 2 ONE 43 A 6
A 2 3 42 A 7
A 1 4 41 OE
A 0 5 40 U B
CE1 6 39 LB
I/O 0 7 38 I/O 15
I/O 1 8 37 I/O 14
I/O 2 9 36 I/O 13
I/O 3 10 35 I/O 12
VCC 11 34 VSS
VSS 12 33 VCC
I/O 4 13 32 I/O 11
I/O 5 14 31 I/O 10
I/O 6 15 30 I/O 9
I/O 7 16 29 I/O 8
WE 17 28 CE2
A 16 18 27 A 8
A 15 19 26 A 9
A 14 20 25 A 10
A 13 21 24 A 11
A 12 22 23
A
B
C
D
E
F
G
H
1 2 3 4 5
LB OE A 0 A 1 A 2
I/O 8 UB A 3 A 4 CE1
I/O 9 I/O 10 A 5 A 6 I/O 1
V SS I/O 11 A 17 A 7 I/O 3
V CC I/O 12 NC A 16 I/O 4
I/O 14 I/O 13 A 14 A 15 I/O 5
I/O 15 NC A 12 A 13 WE
NC A 8 A 9 A 10 A 11
48 Pin BGA (top)
6
CE2
I/O 0
I/O 2
V CC
V SS
I/O 6
I/O 7
NC
Pin Descriptions
Pin Name
A 0 -A 17
WE
CE1, CE2
OE
LB
UB
I/O 0 -I/O 15
V CC
V SS
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
?2008 SCILLC. All rights reserved.
July 2008 - Rev. 10
6 x 8 mm
NC
Not Connected
Publication Order Number:
N04L63W2A/D
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| N04L63W2AT7I | 功能描述:静态随机存取存储器 4MB 3V LOW PWR 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| N04L63W2AT7IT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit |
| N04M1618L1A | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit |
| N04M1618L1AB | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit |
| N04M1618L1AB-85I | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit |
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