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| 型号： | N25S830HAS22IT |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 3V SER 256KB LP 8SOIC |
| 标准包装： | 100 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM |
| 存储容量： | 256K (32K x 8) |
| 速度： | 20MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 托盘 |
N25S830HA
Table 3. ABSOLUTE MAXIMUM RATINGS
Item
Voltage on any pin relative to V SS
Voltage on V CC Supply Relative to V SS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
Symbol
V IN,OUT
V CC
P D
T STG
T A
T SOLDER
Rating
–0.3 to V CC + 0.3
–0.3 to 4.5
500
–40 to 125
? 40 to +85
260 ° C, 10 sec
Unit
V
V
mW
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 4. OPERATING CHARACTERISTICS (Over Specified Temperature Range)
Typ
Item
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V CC
V IH
V IL
Test Conditions
Min
2.7
0.7 x V CC
? 0.3
(Note 1)
Max
3.6
V CC + 0.3
0.8
Unit
V
V
V
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating Current
V OH
V OL
I LI
I LO
I CC1
I CC2
I CC3
I OH = ? 0.4 mA
I OL = 1 mA
CS = V CC , V IN = 0 to V CC
CS = V CC , V OUT = 0 to V CC
F = 1 MHz, I OUT = 0
F = 10 MHz, I OUT = 0
F = fCLK MAX, I OUT = 0
V CC – 0.5
0.2
0.5
0.5
3
6
10
V
V
m A
m A
mA
mA
mA
Standby Current
I SB
CS = V CC , V IN = V SS or V CC
1
4
m A
1. Typical values are measured at Vcc = Vcc Typ., T A = 25 ° C and are not 100% tested.
Table 5. CAPACITANCE (Note 2)
Item
Input Capacitance
I/O Capacitance
Symbol
C IN
C I/O
Test Condition
V IN = 0 V, f = 1 MHz, T A = 25 ° C
V IN = 0 V, f = 1 MHz, T A = 25 ° C
Min
Max
7
7
Unit
pF
pF
2. These parameters are verified in device characterization and are not 100% tested
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