参数资料
| 型号： | N25S830HAT22IT |
| 厂商： | ON Semiconductor |
| 文件页数： | 10/12页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 256KBIT 20MHZ 8TSSOP |
| 标准包装： | 100 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM |
| 存储容量： | 256K (32K x 8) |
| 速度： | 20MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 管件 |
N25S830HA
WRITE Status Register Instruction (WRSR)
This instruction provides the ability to write the status
register and select among several operating modes. Several
of the register bits must be set to a low ‘0’ if any of the other
CS
bits are written. The timing sequence to write to the status
register is shown below, followed by the organization of the
status register.
SCK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Instruction
Status Register Data In
SI
0
0
0
0
0
0
0
1
7
6
5
4
3
2
1
0
SO
High ? Z
Figure 14. WRITE Status Register Sequence
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Mode
Reserved
Reserved
Hold Functio n
0
1
0
1
0 = Word Mode (Default)
0 = Page Mode
1 = Burst Mode
1 = Reserved
Must = 0 Must = 0
Figure 15. Status Register
0 = Hold (Default)
1 = No Hold
READ Status Register Instruction (RDSR)
This instruction provides the ability to read the Status register. The register may be read at any time by performing the
following timing sequence.
CS
SCK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Instruction
SI
0
0
0
0
0
1
0
1
Status Register Data Out
SO
High ? Z
7
6
5
4
3
2
1
0
Figure 16. READ Status Register Instruction (RDSR)
Power ? Up State
The serial SRAM enters a know state at power ? up time. The device is in low ? power standby state with CS = 1. A low level
on CS is required to enter an active state.
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