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| 型号： | N64S818HAT21I |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/13页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 64KB 1.8V LP 8-TSSOP |
| 标准包装： | 100 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM |
| 存储容量： | 64K (8K x 8) |
| 速度： | 16MHz |
| 接口： | SPI 串行 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 托盘 |
N64S818HA
Table 3. ABSOLUTE MAXIMUM RATINGS
Item
Voltage on any pin relative to V SS
Voltage on V CC Supply Relative to V SS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
Symbol
V IN,OUT
V CC
P D
T STG
T A
T SOLDER
Rating
–0.3 to V CC + 0.3
–0.3 to 4.5
500
–40 to 125
? 40 to +85
260 ° C, 10 sec
Unit
V
V
mW
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 4. OPERATING CHARACTERISTICS (Over Specified Temperature Range)
Typ
Item
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V CC
V IH
V IL
Test Conditions
1.8 V Device
Min
1.7
0.7 x V CC
–0.3
(Note 1)
Max
1.95
V CC + 0.3
0.8
Unit
V
V
V
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating
Current
V OH
V OL
I LI
I LO
I CC1
I CC2
I CC3
I OH = ? 0.4 mA
I OL = 1 mA
CS = V CC , V IN = 0 to V CC
CS = V CC , V OUT = 0 to V CC
F = 1 MHz, I OUT = 0
F = 10 MHz, I OUT = 0
F = fCLK MAX, I OUT = 0
V CC – 0.5
0.2
0.5
0.5
3
6
10
V
V
m A
m A
mA
mA
mA
Standby Current
I SB
CS = V CC , V IN = V SS or V CC
200
500
nA
1. Typical values are measured at Vcc = Vcc Typ., T A = 25 ° C and are not 100% tested.
Table 5. CAPACITANCE (Note 2)
Item
Input Capacitance
I/O Capacitance
Symbol
C IN
C I/O
Test Condition
V IN = 0 V, f = 1 MHz, T A = 25 ° C
V IN = 0 V, f = 1 MHz, T A = 25 ° C
Min
Max
7
7
Unit
pF
pF
2. These parameters are verified in device characterization and are not 100% tested
Table 6. TIMING TEST CONDITIONS
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
http://onsemi.com
3
0.1 V CC to 0.9 V CC
5 ns
0.5 V CC
CL = 100 pF
? 40 to +85 ° C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| N64S818HAT21IT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:64Kb Low Power Serial SRAMs 8K × 8 bit Organization |
| N64S830HA | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:64Kb Low Power Serial SRAMs 8K × 8 bit Organization |
| N64S830HAS22I | 功能描述:静态随机存取存储器 64KB 3V SERIAL 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| N64S830HAS22IT | 制造商:ON Semiconductor 功能描述:GENERAL SALES (ULP) - Tape and Reel |
| N64S830HAT22I | 功能描述:静态随机存取存储器 64KB 3V SERIAL 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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