参数资料
型号: NAND01GR4A2BN1T
厂商: NUMONYX
元件分类: PROM
英文描述: 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
封装: 12 X 20 MM, PLASTIC, TSOP-48
文件页数: 33/57页
文件大小: 916K
代理商: NAND01GR4A2BN1T
39/57
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Figure 23. Command Latch AC Waveforms
Figure 24. Address Latch AC Waveforms
Note: Address cycle 4 is only required for 512Mb and 1Gb devices.
ai08028
CL
E
W
AL
I/O
tCLHWL
tELWL
tWHCLL
tWHEH
tWLWH
tALLWL
tWHALH
Command
tDVWH
tWHDX
(CL Setup time)
(CL Hold time)
(Data Setup time)
(Data Hold time)
(ALSetup time)
(AL Hold time)
(E Setup time)
(E Hold time)
ai08029
CL
E
W
AL
I/O
tWLWH
tELWL
tWLWL
tCLLWL
tWHWL
tALHWL
tDVWH
tWLWL
tWLWH
tWHWL
tWHDX
tWHALL
tDVWH
tWHDX
tDVWH
tWHDX
tDVWH
tWHDX
tWHALL
Adrress
cycle 1
tWHALL
(AL Setup time)
(AL Hold time)
Adrress
cycle 4
Adrress
cycle 3
Adrress
cycle 2
(CL Setup time)
(Data Setup time)
(Data Hold time)
(E Setup time)
相关PDF资料
PDF描述
NAND256W3A2CZA1E 32M X 8 FLASH 3V PROM, 35 ns, PBGA55
NAND01GR4A2AZB6 64M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NAND01GW3B2CN1E 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48
NAND04GR3B3AN6 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512W3B3BZA1F 64M X 8 FLASH 3V PROM, 35 ns, PBGA63
相关代理商/技术参数
参数描述
NAND01GR4A2BN6 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR4A2BN6E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR4A2BN6F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR4A2BN6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR4A2BV1 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories