参数资料
型号: NAND01GW4B3BN6T
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 64M X 16 FLASH 3V PROM, 35 ns, PDSO48
封装: 12 X 20 MM, PLASTIC, TSOP-48
文件页数: 44/59页
文件大小: 998K
代理商: NAND01GW4B3BN6T
49/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Figure 32. Page Program AC Waveform
Note: A fifth address cycle is required for 2Gb, 4Gb and 8Gb devices.
CL
E
W
AL
R
I/O
RB
SR0
ai08668
N
Last
10h
70h
80h
Page Program
Setup Code
Confirm
Code
Read Status Register
tWLWL
tWHBL
tBLBH2
Page
Program
Address Input
Data Input
Add.N
cycle 1
Add.N
cycle 4
Add.N
cycle 3
Add.N
cycle 2
(Write Cycle time)
(Program Busy time)
相关PDF资料
PDF描述
NAND01GW4B3CZA1E 64M X 16 FLASH 3V PROM, 35 ns, PBGA63
NAND08GR4B2BZC6T 512M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NAND08GR4B3BN1 512M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512R3B3BZA6E 64M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
NAND512W3B3BN6E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
相关代理商/技术参数
参数描述
NAND01GW4BZA6 制造商:Micron Technology Inc 功能描述:1G, 3V, NAND, VFBGA63, IND - Trays
NAND01GW4M0AZB5E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND01GW4M0AZB5F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND01GW4M0AZC5E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
NAND01GW4M0AZC5F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP