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参数资料
| 型号： | NAND02GW4B3AN6T |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 128M X 16 FLASH 3V PROM, 35 ns, PDSO48 |
| 封装： | 12 X 20 MM, PLASTIC, TSOP-48 |
| 文件页数： | 1/59页 |
| 文件大小： | 998K |
| 代理商： | NAND02GW4B3AN6T |
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PRELIMINARY DATA
February 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
NAND512-B, NAND01G-B NAND02G-B
NAND04G-B NAND08G-B
512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
FEATURES SUMMARY
■
HIGH DENSITY NAND FLASH MEMORIES
–
Up to 8 Gbit memory array
–
Up to 64Mbit spare area
–
Cost effective solutions for mass storage
applications
■
NAND INTERFACE
–
x8 or x16 bus width
–
Multiplexed Address/ Data
–
Pinout compatibility for all densities
■
SUPPLY VOLTAGE
–
1.8V device: VDD = 1.7 to 1.95V
–
3.0V device: VDD = 2.7 to 3.6V
■
PAGE SIZE
–
x8 device: (2048 + 64 spare) Bytes
–
x16 device: (1024 + 32 spare) Words
■
BLOCK SIZE
–
x8 device: (128K + 4K spare) Bytes
–
x16 device: (64K + 2K spare) Words
■
PAGE READ / PROGRAM
–
Random access: 25s (max)
–
Sequential access: 50ns (min)
–
Page program time: 300s (typ)
■
COPY BACK PROGRAM MODE
–
Fast page copy without external buffering
■
CACHE PROGRAM AND CACHE READ
MODES
–
Internal Cache Register to improve the
program and read throughputs
■
FAST BLOCK ERASE
–
Block erase time: 2ms (typ)
■
STATUS REGISTER
■
ELECTRONIC SIGNATURE
■
CHIP ENABLE ‘DON’T CARE’
–
for simple interface with microcontroller
■
AUTOMATIC PAGE 0 READ AT POWER-UP
–
Boot from NAND support
■
SERIAL NUMBER OPTION
Figure 1. Packages
■
DATA PROTECTION
–
Hardware and Software Block Locking
–
Hardware Program/Erase locked during
Power transitions
■
DATA INTEGRITY
–
100,000 Program/Erase cycles
–
10 years Data Retention
■
RoHS COMPLIANCE
–
Lead-Free Components are Compliant
with the RoHS Directive
■
DEVELOPMENT TOOLS
–
Error Correction Code software and
hardware models
–
Bad Blocks Management and Wear
Leveling algorithms
–
PC Demo board with simulation software
–
File System OS Native reference software
–
Hardware simulation models
TSOP48 12 x 20mm
VFBGA63 9.5 x 12 x 1mm
TFBGA63 9.5 x 12 x 1.2mm
LFBGA63 9.5 x 12 x 1.4mm
FBGA
USOP48 12 x 17 x 0.65mm
相关PDF资料 |
PDF描述 |
|---|---|
| NAND02GW4B3BN1 | 128M X 16 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND02GW4B3CN1E | 128M X 16 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND04GW4B3BN1F | 256M X 16 FLASH 3V PROM, 35 ns, PDSO48 |
| NN514405LZ-45 | 1M X 4 EDO DRAM, 45 ns, PZIP20 |
| NM93CS46ALEN | 128 X 8 MICROWIRE BUS SERIAL EEPROM, PDIP8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND04GR3B2DDI6 | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND04GR3B2DN6E | 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040 |
| NAND04GR3B2DZL6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND04GR3B2EN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND04GR3B2EN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
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