参数资料
型号: NAND08GW3B2CZC1
厂商: NUMONYX
元件分类: PROM
英文描述: 1G X 8 FLASH 3V PROM, 35 ns, PBGA63
封装: 9.50 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, LFBGA-63
文件页数: 8/59页
文件大小: 998K
代理商: NAND08GW3B2CZC1
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
16/59
Table 6. Address Insertion, x8 Devices
Note: 1. Any additional address input cycles will be ignored.
2. The fifth cycle is valid for 2Gb, 4Gb and 8Gb devices. A28 is for 2Gb devices, A29-A28 are for 4Gb devices and A30-A28 for 8Gb
devices only.
Table 7. Address Insertion, x16 Devices
Note: 1. Any additional address input cycles will be ignored.
2. The fifth cycle is valid for 2Gb, 4Gb and 8Gb devices. A27 is for 2Gb devices, A28-A27 are for 4Gb devices and A29-A27 for 8Gb
devices.
Bus Cycle
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1st
A7
A6
A5
A4
A3
A2
A1
A0
2nd
VIL
A11
A10
A9
A8
3rd
A19
A18
A17
A16
A15
A14
A13
A12
4th
A27
A26
A25
A24
A23
A22
A21
A20
5th(2)
VIL
A30
A29
A28
Bus
Cycle
I/O8-
I/O15
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1st
X
A7
A6
A5
A4
A3
A2
A1
A0
2nd
X
VIL
A10
A9
A8
3rd
X
A18
A17
A16
A15
A14
A13
A12
A11
4th
X
A26
A25
A24
A23
A22
A21
A20
A19
5th(2)
X
VIL
A29
A28
A27
相关PDF资料
PDF描述
NAND01GR3B3CZA1 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
NAND02GR4B2BZB1 128M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
NCH030A3-FREQ-OUT27 CRYSTAL OSCILLATOR, CLOCK, 1 MHz - 4 MHz, HCMOS OUTPUT
NTHA3JAA3-FREQ-OUT27 CRYSTAL OSCILLATOR, CLOCK, 1 MHz - 4 MHz, HCMOS OUTPUT
NTHA3KC3-FREQ-OUT27 CRYSTAL OSCILLATOR, CLOCK, 1 MHz - 4 MHz, HCMOS OUTPUT
相关代理商/技术参数
参数描述
NAND08GW3B4BN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4BN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND08GW3B4CN1F 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4CZL6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3C2AE01 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel