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参数资料
| 型号： | NAND256R3A3DN6F |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 32M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| 封装： | 12 X 20 MM, TSOP-48 |
| 文件页数： | 1/5页 |
| 文件大小： | 150K |
| 代理商： | NAND256R3A3DN6F |
1/5
DATA BRIEFING
For further information please contact the STMicroelectronics distributor nearest to you.
FEATURES SUMMARY
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HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32Mbit spare area
– Cost effective solutions for mass storage ap-
plications
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NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
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SUPPLY VOLTAGE
– 1.8V device: VCC = 1.65 to 1.95V
– 3.0V device: VCC = 2.7 to 3.6V
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PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
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BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
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PAGE READ / PROGRAM
– Random access: 12s (max)
– Sequential access: 50ns (min)
– Page program time: 200s (typ)
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COPY BACK PROGRAM MODE
– Fast page copy without external buffering
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CACHE PROGRAM MODE
– Internal Cache Register to improve the pro-
gram throughput
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FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
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STATUS REGISTER
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ELECTRONIC SIGNATURE
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CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
Figure 1. Packages
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AUTOMATIC PAGE 0 READ AT POWER-UP
OPTION
– Boot from NAND support
– Automatic Memory Download
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SERIAL NUMBER OPTION
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HARDWARE DATA PROTECTION
– Program/Erase locked during Power transi-
tions
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DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
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DEVELOPMENT TOOLS
– Error Correction Code software and hard-
ware models
– Bad Blocks Management and Wear Leveling
algorithms
– PC Demo board with simulation software
– File System OS Native reference software
– Hardware simulation models
TSOP48
12 x 20 mm
VFBGA63 8.5x15x1 mm
TFBGA63 8.5x15x1.2 mm
VFBGA63 9x11x1 mm
FBGA
相关PDF资料 |
PDF描述 |
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| NAND256R4A0DN1T | 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND256W3A0DN1F | 32M X 8 FLASH 3V PROM, 12000 ns, PDSO48 |
| NAND256W3A1CZA6F | 32M X 8 FLASH 3V PROM, 12000 ns, PBGA63 |
| NAND256W3A3BN6E | 32M X 8 FLASH 3V PROM, 12000 ns, PDSO48 |
| NAND256W3A3CZA1F | 32M X 8 FLASH 3V PROM, 12000 ns, PBGA63 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND256W3A0AN6 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND256W3A0AN6E | 功能描述:闪存 2.7-3.6V 256M(32Mx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND256W3A0AN6F | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND256W3A0AZA6E | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 2.7V TO 3.6V 256MBIT 32MX8 12US 55VFBGA - Trays |
| NAND256W3A0AZA6F | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 2.7V TO 3.6V 256MBIT 32MX8 12US 55VFBGA - Tape and Reel |
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