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参数资料
| 型号： | NAND256R4A1AN1 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 16M X 16 FLASH 1.8V PROM, 10000 ns, PDSO48 |
| 封装： | 12 X 20 MM, PLASTIC, TSOP-48 |
| 文件页数： | 24/56页 |
| 文件大小： | 882K |
| 代理商： | NAND256R4A1AN1 |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
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Figure 22. Bad Block Management Flowchart
Figure 23. Garbage Collection
Garbage Collection
When a data page needs to be modified, it is faster
to write to the first available page, and the previous
page is marked as invalid. After several updates it
is necessary to remove invalid pages to free some
memory space.
To free this memory space and allow further pro-
gram operations it is recommended to implement
a Garbage Collection algorithm. In a Garbage Col-
lection software the valid pages are copied into a
free area and the block containing the invalid pag-
es is erased (see Figure 23.).
Wear-leveling Algorithm
For write-intensive applications, it is recommend-
ed to implement a Wear-leveling Algorithm to
monitor and spread the number of write cycles per
block.
In memories that do not use a Wear-Leveling Al-
gorithm not all blocks get used at the same rate.
Blocks with long-lived data do not endure as many
write cycles as the blocks with frequently-changed
data.
The Wear-leveling Algorithm ensures that equal
use is made of all the available write cycles for
each block. There are two wear-leveling levels:
AI07588C
START
END
NO
YES
NO
Block Address =
Block 0
Data
= FFh?
Last
block?
Increment
Block Address
Update
Bad Block table
Valid
Page
Invalid
Page
Free
Page
(Erased)
Old Area
AI07599B
New Area (After GC)
相关PDF资料 |
PDF描述 |
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| NAND256R4A3AN1 | 16M X 16 FLASH 1.8V PROM, 10000 ns, PDSO48 |
| NAND256R4A3AZA1T | 16M X 16 FLASH 1.8V PROM, 10000 ns, PBGA55 |
| NAND128W4A1AZA6T | 8M X 16 FLASH 3V PROM, 10000 ns, PBGA55 |
| NAND128W4A3AN6E | 8M X 16 FLASH 3V PROM, 10000 ns, PDSO48 |
| NAND128W4A1AV6 | 8M X 16 FLASH 3V PROM, 10000 ns, PDSO48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND256W3A0AN6 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND256W3A0AN6E | 功能描述:闪存 2.7-3.6V 256M(32Mx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND256W3A0AN6F | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND256W3A0AZA6E | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 2.7V TO 3.6V 256MBIT 32MX8 12US 55VFBGA - Trays |
| NAND256W3A0AZA6F | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 2.7V TO 3.6V 256MBIT 32MX8 12US 55VFBGA - Tape and Reel |
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