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参数资料
| 型号： | NAND256W3A1BZA1E |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 32M X 8 FLASH 3V PROM, 12000 ns, PBGA63 |
| 封装： | 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63 |
| 文件页数： | 4/5页 |
| 文件大小： | 150K |
| 代理商： | NAND256W3A1BZA1E |
4/5
PART NUMBERING
Table 3. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to ’1’.
For further information on any aspect of this device, please contact your nearest ST Sales Office.
Example:
NAND512R3A
0
A ZA
1
T
Device Type
NAND Flash Memory
Density
128 = 128Mb
256 = 256Mb
512 = 512Mb
01G = 1Gb
Operating Voltage
R = VCC = 1.65 to 1.95V
W = VCC = 2.7 to 3.6V
Bus Width
3 = x8
4 = x16
Family Identifier
A = 528 Bytes/ 264 Word Page
Options
0 = normal
1 = Read Page0 at Power-up
2 = Chip Enable Don’t Care
3 = Chip Enable Don’t Care Enabled and Read Page0 at Power-up
Silicon Version
A, B, C, D
Package
N = TSOP48 12 x 20mm
ZA = VFBGA63 9 x 11x1mm, 6x8 ball array, 0.8mm pitch (128Mbit and 256Mbit devices)
ZA = VFBGA63 8.5 x 15x1mm, 6x8 ball array, 0.8mm pitch (512Mbit devices)
ZA = TFBGA63 8.5 x 15x1.2mm, 6x8 ball array, 0.8mm pitch (1Gbit devices)
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
blank = Standard Packing
T = Tape & Reel Packing
E = Lead Free Package, Standard Packing
F = Lead Free Package, Tape & Reel Packing
相关PDF资料 |
PDF描述 |
|---|---|
| NAND256W3A1DN1F | 32M X 8 FLASH 3V PROM, 12000 ns, PDSO48 |
| NAND256W4A1BN1 | 16M X 16 FLASH 3V PROM, 12000 ns, PDSO48 |
| NAND256W4A2DZA6 | 16M X 16 FLASH 3V PROM, 12000 ns, PBGA63 |
| NAND256W4A3CN1F | 16M X 16 FLASH 3V PROM, 12000 ns, PDSO48 |
| NAND256R4A3DZA6E | 16M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND256W3A2AN6E | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8 12US 48TSOP - Trays |
| NAND256W3A2AN6F | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 2.7V TO 3.6V 256MBIT 32MX8 12US 48TSOP - Tape and Reel |
| NAND256W3A2BD06 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND256W3A2BE06 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND256W3A2BN6E | 功能描述:闪存 NAND 256 MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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