参数资料
型号: NAND512W3B3BZA6E
厂商: NUMONYX
元件分类: PROM
英文描述: 64M X 8 FLASH 3V PROM, 35 ns, PBGA63
封装: 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63
文件页数: 22/59页
文件大小: 998K
代理商: NAND512W3B3BZA6E
29/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Table 13. Status Register Bits
Note: 1. The SR6 bit and SR0 bit have a different meaning during Cache Program and Cache Read operations.
2. Only valid for Cache Program operations, for other operations it is same as SR6.
3. Only valid for Cache Program operations, for other operations it is Don’t Care.
Bit
Name
Logic Level
Definition
SR7
Write Protection
'1'
Not Protected
'0'
Protected
SR6(1)
Program/ Erase/ Read
Controller
'1'
P/E/R C inactive, device ready
'0'
P/E/R C active, device busy
Cache Ready/Busy
'1'
Cache Register ready (Cache Program only)
'0'
Cache Register busy (Cache Program only)
SR5
Program/ Erase/ Read
Controller(2)
'1'
P/E/R C inactive, device ready
'0'
P/E/R C active, device busy
SR4, SR3, SR2
Reserved
Don’t Care
SR1
Cache Program Error(3)
'1'
Page N-1 failed in Cache Program operation
'0'
Page N-1 programmed successfully
SR0(1)
Generic Error
‘1’
Error – operation failed
‘0’
No Error – operation successful
Cache Program Error
‘1’
Page N failed in Cache Program operation
‘0’
Page N programmed successfully
相关PDF资料
PDF描述
NAND512W3B3AN1 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3B3BN1F 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND04GR4B3AN1 256M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
NAND02GW3B3BZB1F 256M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND02GW3B3BN1F 256M X 8 FLASH 3V PROM, 35 ns, PDSO48
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