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参数资料
| 型号： | NAND99W3M1AZBC5F |
| 厂商： | NUMONYX |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA137 |
| 封装： | 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-137 |
| 文件页数： | 30/33页 |
| 文件大小： | 724K |
| 代理商： | NAND99W3M1AZBC5F |
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Description
NANDxxxxMx
1
Description
The NANDxxxxMx devices (see Table 1: Device summary for the list of devices) combine
two memory devices in a multichip package:
l
256-Mbit, 512-Mbit, or 1-Gbit SLC small page NAND flash memory, and either:
l
256-Mbit or 512-Mbit SDR (single data rate) LPSDRAM or
l
256-Mbit or 512-Mbit DDR (double data rate) LPSDRAM
The NAND flash memory and LPSDRAM components have separate power supplies and
grounds. They also have separate control, address and input/output signals; this allows
simultaneous access to both devices at any moment. The NAND flash memory and
LPSDRAM components are distinguished by a Chip Enable input, EF, for the NAND flash
The NANDxxxxMx devices are available with a 1.8 V or 2.6 V voltage supply and are offered
in the following packages as shown in Table 2: Product list:
l
TFBGA107 (10.5 × 13 × 1.2 mm)
l
TFBGA149 (10 × 13.5 × 1.2 mm)
l
TFBGA137 (10.5 × 13 × 1.2 mm)
l
TFBGA152 (14 × 14 × 1.1 mm)
The memories are supplied with all the NAND flash memory bits erased (set to ‘1’).
This datasheet should be read in conjunction with the SLC small page NAND flash memory
and LPSDRAM datasheets.
Table 2.
Product list
Root part number
NAND product
LPSDRAM product
Package
NAND88R3M0
256 Mbits (×8) - 1.8 V
SDR 256 Mbits (×16) 1.8 V, 133 MHz
TFBGA107
NAND99R3M0
512 Mbits (×8) - 1.8 V
SDR 512 Mbits (×16) 1.8 V, 133 MHz
TFBGA149
NAND98R3M0
512 Mbits (×8) - 1.8 V
SDR 256 Mbits (×16) 1.8 V, 133 MHz
TFBGA107
TFBGA149
TFBGA152
NAND99W3M1
512 Mbits (×8) - 2.6 V
SDR 512 Mbits (×32) 1.8 V, 133 MHz
TFBGA137
NAND99R3M1
512 Mbits (×8) - 1.8 V
SDR 512 Mbits (×32) 1.8 V, 133 MHz
LFBGA137
NAND99W3M0
512 Mbits (×8) - 2.6 V
SDR 512 Mbits (×16) 1.8 V, 133 MHz
TFBGA107
NAND98W3M0
512 Mbits (×8) - 2.6 V
SDR 256 Mbits (×16) 1.8 V, 133 MHz
TFBGA107
NANDA9W3M1
1 Gbit (x8) - 2.6 V
SDR 512 Mbits (x32) 1.8 V, 133 MHz
TFBGA 137
NAND99R4M2
512 Mbits (x16) - 1.8 V
DDR 512 Mbits (x16) 1.8 V, 133 MHz
TFBGA 149
NAND99R3M2
512 Mbits (×8) - 1.8 V
DDR 512 Mbits (x16) 1.8 V, 133 MHz
TFBGA107
NAND98W3M1
512 Mbits (×8) - 2.6 V
SDR 256 Mbits (x32) 1.8 V, 133 MHz
TFBGA 137
NAND98R3M1
512 Mbits (×8) - 1.8 V
SDR 256 Mbits (x32) 1.8 V, 133 MHz
TFBGA 137
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| NANDA8R3N0AZBB5E | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
| NANDA8R3N1AZBC5E | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
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| NANDA8R3N8AZBB5E | 制造商:Micron Technology Inc 功能描述:128MX8/16MX16 MCP PLASTIC WIRELESS TEMP PBF TFBGA 1.8V - Trays |
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