参数资料
| 型号： | NB2872ASNR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | IC CLOCK SYNTHESIZR 6MA TSOT-6 |
| 标准包装： | 1 |
| 类型： | 时钟/频率合成器 |
| PLL： | 是 |
| 输入： | CMOS，晶体 |
| 输出： | CMOS |
| 电路数： | 1 |
| 比率 - 输入:输出： | 1:2 |
| 差分 - 输入:输出： | 无/无 |
| 频率 - 最大： | 30MHz |
| 除法器/乘法器： | 是/无 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 剪切带 (CT) |
| 其它名称： | NB2872ASNR2GOSCT |
NB2872A
http://onsemi.com
3
Figure 3. Modulation Profile
Table 3. MAXIMUM RATINGS
Symbol
Description
Rating
Unit
VDD, VIN
Voltage on any pin with respect to Ground
0.5to+ 7.0
V
TSTG
Storage Temperature
--65 to +125
C
TA
Operating Temperature
0to70
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 4. DC ELECTRICAL CHARACTERISTICS (Test Conditions: All parameters are measured at room temperature 25C)
Symbol
Description
Min
Typ
Max
Unit
VIL
Input LOW Voltage
GND -- 0.3
0.8
V
VIH
Input HIGH Voltage
2.0
VDD +0.3
V
IIL
Input LOW Current
--35
mA
IIH
Input HIGH Current
35
mA
IXOL
XOUT Output LOW Current (@ 4.0 V, VDD =3.3 V)
3
mA
IXOH
XOUT Output HIGH Current (@ 2.5 V, VDD =3.3 V)
3
mA
VOL
Output LOW Voltage (VDD =3.3 V, IOL =20 mA)
0.4
V
VOH
Output HIGH Voltage (VDD =3.3 V, IOH =20 mA)
2.5
V
IDD
Static Supply Current (Note 1)
1.5
mA
ICC
Dynamic Supply Current (3.3 V, 30 MHz, and 15 pF loading)
6
mA
VDD
Operating Voltage
3.0
3.3
3.6
V
tON
Powerup Time (first locked cycle after powerup) (Note 2)
10
mS
ZOUT
Clock Output Impedance
50
Ω
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. XIN/CLKIN pin is pulled low.
2. VDD and XIN/CLKIN input are stable.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NB2879A | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Power, Reduced EMI Clock Synthesizer |
| NB2879ASNR2 | 功能描述:时钟合成器/抖动清除器 2.5V/3.3V Low Power RoHS:否 制造商:Skyworks Solutions, Inc. 输出端数量: 输出电平: 最大输出频率: 输入电平: 最大输入频率:6.1 GHz 电源电压-最大:3.3 V 电源电压-最小:2.7 V 封装 / 箱体:TSSOP-28 封装:Reel |
| NB2879ASNR2G | 功能描述:时钟合成器/抖动清除器 HF - EMI REDUCER RoHS:否 制造商:Skyworks Solutions, Inc. 输出端数量: 输出电平: 最大输出频率: 输入电平: 最大输入频率:6.1 GHz 电源电压-最大:3.3 V 电源电压-最小:2.7 V 封装 / 箱体:TSSOP-28 封装:Reel |
| NB2969A | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Power, Reduced EMI Clock Synthesizer |
| NB2969ASNR2 | 功能描述:锁相环 - PLL 2.5V/3.3V Low Power RoHS:否 制造商:Silicon Labs 类型:PLL Clock Multiplier 电路数量:1 最大输入频率:710 MHz 最小输入频率:0.002 MHz 输出频率范围:0.002 MHz to 808 MHz 电源电压-最大:3.63 V 电源电压-最小:1.71 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:QFN-36 封装:Tray |
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