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| 型号： | NB3H83905CDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 10/14页 |
| 文件大小： | 0K |
| 描述： | IC CLK BUFFER 1:6 100MHZ 16-SOIC |
| 标准包装： | 2,500 |
| 类型： | 扇出缓冲器（分配） |
| 电路数： | 1 |
| 比率 - 输入:输出： | 1:6 |
| 差分 - 输入:输出： | 无/无 |
| 输入： | LVCMOS，LVTTL，晶体 |
| 输出： | LVCMOS，LVTTL |
| 频率 - 最大： | 100MHz |
| 电源电压： | 1.6 V ~ 3.465 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 带卷 (TR) |
NB3H83905C
http://onsemi.com
5
Table 6. DC CHARACTERISTICS
Symbol
Characteristic
Min
Typ
Max
Unit
VDD = VDDO = 3.135 V to 3.465 V (3.3 V $5%); GND = 0 V, TA = 405C to +855C
IDD
Core Quiescent Power Supply Current (ENABLEx = LOW)
10
mA
IDDO
Output Quiescent Power Supply Current (ENABLEx = LOW)
5
mA
VIH
Input HIGH Voltage ENABLEx, XTAL_IN/CLK
2
VDD +
0.3 V
V
VIL
Input LOW Voltage ENABLEx, XTAL_IN/CLK
0.3
0.8
V
VOH
Output HIGH Voltage (Note 4)
2.6
V
VOL
Output LOW Voltage (Note 4)
0.5
V
CIN
Input Capacitance
4
pF
CPD
Power Dissipation Capacitance (per Output) (Note 4)
19
pF
ROUT
Output Impedance (Note 4)
7
W
VDD = VDDO = 2.375 V to 2.625 V (2.5 V $5%); GND = 0 V, TA = 405C to +855C
IDD
Core Quiescent Power Supply Current (ENABLEx = LOW)
8
mA
IDDO
Output Quiescent Power Supply Current (ENABLEx = LOW)
4
mA
VIH
Input HIGH Voltage ENABLEx, XTAL_IN/CLK
1.7
VDD +
0.3 V
V
VIL
Input LOW Voltage ENABLEx, XTAL_IN/CLK
0.3
0.7
V
VOH
Output HIGH Voltage (IOH = 1 mA)
Output HIGH Voltage (Note 4)
2.0
1.8
V
VOL
Output LOW Voltage (IOL = 1 mA)
Output LOW Voltage (Note 4)
0.4
0.45
V
CIN
Input Capacitance
4
pF
CPD
Power Dissipation Capacitance (per Output) (Note 4)
18
pF
ROUT
Output Impedance (Note 4)
7
W
VDD = VDDO = 1.6 V to 2.0 V (1.8 V $0.2 V); GND = 0 V, TA = 405C to +855C
IDD
Core Quiescent Power Supply Current (ENABLEx = LOW)
5
mA
IDDO
Output Quiescent Power Supply Current (ENABLEx = LOW)
3
mA
VIH
Input HIGH Voltage ENABLEx, XTAL_IN/CLK
0.65*VDD
VDD +
0.3 V
V
VIL
Input LOW Voltage ENABLEx, XTAL_IN/CLK
0.3
0.35*VDD
V
VOH
Output HIGH Voltage (Note 4)
VDDO0.3
V
VOL
Output LOW Voltage (Note 4)
0.35
V
CIN
Input Capacitance
4
pF
CPD
Power Dissipation Capacitance (per Output) (Note 4)
16
pF
ROUT
Output Impedance (Note 4)
10
W
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification
limit values are applied individually under normal operating conditions and not valid simultaneously.
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