参数资料
| 型号： | NBSG86ABA |
| 厂商： | ON Semiconductor |
| 文件页数： | 10/17页 |
| 文件大小： | 0K |
| 描述： | IC SMART GATE SIGE DIFF 16FCBGA |
| 产品变化通告： | Product Discontinuation 21/Jun/2007 |
| 标准包装： | 100 |
| 逻辑类型： | 可配置多功能 |
| 电路数： | 2 |
| 输入数： | 2 |
| 施密特触发器输入： | 无 |
| 输出类型： | 差分 |
| 电源电压： | 2.375 V ~ 3.465 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-LBGA，FCBGA |
| 供应商设备封装： | 16-FCBGA（4x4） |
| 包装： | 管件 |
| 其它名称： | NBSG86ABAOS |
NBSG86A
http://onsemi.com
2
VTD1 D1
D1 VTD1
VTD0 D0
D0 VTD0
VEE
Q
VCC
OLS
SEL
VTSEL
56
7
8
16
15
14
13
12
11
10
9
1
2
3
4
NBSG86A
Exposed Pad
(EP)
Figure 1. QFN16 Pinout (Top View)
Table 1. Pin Description
Pin
Name
I/O
Description
QFN
1
OLS
(Note 3)
Input
Input Pin for the Output Level Select (OLS). See Table 2.
2
SEL
ECL, CML, LVCMOS,
LVDS, LVTTL Input
Inverted Differential Select Logic Input.
3
SEL
ECL, CML, LVCMOS,
LVDS, LVTTL Input
Noninverted Differential Select Logic Input.
4
VTSEL
5
VTD1
6
D1
ECL, CML, LVCMOS,
LVDS, LVTTL Input
Noninverted Differential Input 1. Internal 75 kW to VEE.
7
D1
ECL, CML, LVCMOS,
LVDS, LVTTL Input
Inverted Differential Input 1. Internal 75 kW to VEE and 36.5 kW to VCC.
8
VTD1
9
VCC
Positive Supply Voltage (Note 2)
10
Q
RSECL Output
Noninverted Differential Output. Typically Terminated with 50 W Resistor to VTT = VCC
2 V.
11
Q
RSECL Output
Inverted Differential Output. Typically Terminated with 50 W Resistor to VTT = VCC 2 V
12
VEE
Negative Supply Voltage (Note 2)
13
VTD0
14
D0
ECL, CML, LVCMOS,
LVDS, LVTTL Input
Inverted Differential Input 0. Internal 75 kW to VEE and 36.5 kW to VCC.
15
D0
ECL, CML, LVCMOS,
LVDS, LVTTL Input
Noninverted Differential Input 0. Internal 75 kW to VEE.
16
VTD0
EP
The Exposed Pad (EP) and the QFN16 package bottom is thermally connected to the die
for improved heat transfer out of package. The exposed pad must be attached to a heat
sinking conduit. The pad is electrically connected to the die but may be electrically and
thermally connected to VEE on the PC board.
1. In the differential configuration when the input termination pins (VTDx, VTDx, VTSEL) are connected to a common termination voltage,
or left open, and if no signal is applied then the device will be susceptible to selfoscillation.
2. All VCC and VEE pins must be externally connected to Power Supply to guarantee proper operation.
3. When an output level of 400 mV is desired and VCC VEE > 3.0 V, 2 kW resistor should be connected from OLS pin to VEE.
相关PDF资料 |
PDF描述 |
|---|---|
| N2526-6002-RB | CONN HEADER 26 POS STRGHT GOLD |
| TXR41AB90-1208AI | ADPTR TINEL LOCK ANG SHELL 12,13 |
| 74HCT74PW,118 | IC DUAL D FF POSEDG TRIG 14TSSOP |
| MC10EP101FA | IC GATE OR/NOR 4INPUT ECL 32LQFP |
| TXR18AB00-2410BI | ADPTR TINEL LOCK STR SHELL 24 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NBSG86ABAEVB | 功能描述:时钟和定时器开发工具 BBG NBSG86ABA EVAL BOARD RoHS:否 制造商:Texas Instruments 产品:Evaluation Modules 类型:Clock Conditioners 工具用于评估:LMK04100B 频率:122.8 MHz 工作电源电压:3.3 V |
| NBSG86ABAHTBG | 功能描述:时钟驱动器及分配 BBG SIGE DIF SMARTGATE OL RoHS:否 制造商:Micrel 乘法/除法因子:1:4 输出类型:Differential 最大输出频率:4.2 GHz 电源电压-最大: 电源电压-最小:5 V 最大工作温度:+ 85 C 封装 / 箱体:SOIC-8 封装:Reel |
| NBSG86ABAR2 | 功能描述:逻辑门 2.5V/3.3V SiGe Diff RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| NBSG86AMAG | 功能描述:IC SMART GATE SIGE DIFF 16-FCLGA RoHS:是 类别:集成电路 (IC) >> 逻辑 - 栅极和逆变器 - 多功能，可配置 系列:- 产品变化通告:Product Obsolescence 05/Oct/2010 标准包装:100 系列:- 逻辑类型:可配置多功能 电路数:2 输入数:2 施密特触发器输入:无 输出类型:差分 输出电流高，低:- 电源电压:2.375 V ~ 3.465 V 工作温度:-40°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-LBGA，FCBGA 供应商设备封装:16-FCBGA（4x4） 包装:带卷 (TR) |
| NBSG86AMN | 功能描述:逻辑门 2.5V/3.3V SiGe Diff RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。