参数资料
型号: NBSG86ABAR2
厂商: ON Semiconductor
文件页数: 13/17页
文件大小: 0K
描述: IC SMART GATE SIGE DIFF 16FCBGA
产品变化通告: Product Discontinuation 20/Aug/2008
标准包装: 1
逻辑类型: 可配置多功能
电路数: 2
输入数: 2
施密特触发器输入:
输出类型: 差分
电源电压: 2.375 V ~ 3.465 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-LBGA,FCBGA
供应商设备封装: 16-FCBGA(4x4)
包装: 标准包装
其它名称: NBSG86ABAR2OSDKR
NBSG86A
http://onsemi.com
5
Table 7. Interfacing Options
INTERFACING OPTIONS
CONNECTIONS
CML
Connect VTD0, VTD1, VTSEL and VTD0, VTD1 to VCC
LVDS
Connect VTD0, VTD1, VTD0 and VTD1 together. Leave VTSEL open.
ACCOUPLED
Bias VTD0, VTD1, VTSEL and VTD0, VTD1 Inputs within (VIHCMR) Common Mode Range
RSECL, PECL, NECL
Standard ECL Termination Techniques
LVTTL, LVCMOS
An external voltage should be applied to the unused complementary differential input.
Nominal voltage 1.5 V for LVTTL and VCC/2 for LVCMOS inputs.
Table 8. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistors
(R1)
75 kW
Internal Input Pullup Resistor
(R2)
37.5 kW
ESD Protection
Human Body Model
Machine Model
Charged Device Model
> 1 KV
> 50 V
> 4 KV
Moisture Sensitivity (Note 6)
PbFree Pkg
QFN16
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
6. For additional information, see Application Note AND8003/D.
Table 9. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
Positive Power Supply
VEE = 0 V
3.6
V
VEE
Negative Power Supply
VCC = 0 V
3.6
V
VI
Positive Input
Negative Input
VEE = 0 V
VCC = 0 V
VI v VCC
VI w VEE
3.6
V
VINPP
Differential Input Voltage |Dn Dn|, |SEL SEL| VCC VEE w 2.8 V
VCC VEE < 2.8 V
2.8
|VCC VEE|
V
IIN
Input Current Through RT (50 W Resistor)
Static
Surge
45
80
mA
Iout
Output Current
Continuous
Surge
25
50
mA
TA
Operating Temperature Range
QFN16
40 to +85
°C
Tstg
Storage Temperature Range
65 to +150
°C
qJA
Thermal Resistance (JunctiontoAmbient)
(Note 7)
0 lfpm
500 lfpm
QFN16
41.6
35.2
°C/W
qJC
Thermal Resistance (JunctiontoCase)
2S2P (Note 7)
QFN16
4.0
°C/W
Tsol
Wave Solder
PbFree < 3 sec @ 260°C
265
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
7. JEDEC standard multilayer board 2S2P (2 signal, 2 power) with 8 filled thermal vias under exposed pad.
相关PDF资料
PDF描述
TXR40AB00-1612AI2 ADPTR TINEL LOCK STR SHELL 17, E
74HC74DB,112 IC DUAL POS-EDG-TRG D F-F 14SSOP
TXR54AB45-1206AI ADPTR TINEL LOCK ANG SHELL 7, 12
7178DG BOARD LEVEL HEAT SINK
SY10E404JZ IC GATE AND/NAND QUAD 28-PLCC
相关代理商/技术参数
参数描述
NBSG86AMAG 功能描述:IC SMART GATE SIGE DIFF 16-FCLGA RoHS:是 类别:集成电路 (IC) >> 逻辑 - 栅极和逆变器 - 多功能,可配置 系列:- 产品变化通告:Product Obsolescence 05/Oct/2010 标准包装:100 系列:- 逻辑类型:可配置多功能 电路数:2 输入数:2 施密特触发器输入:无 输出类型:差分 输出电流高,低:- 电源电压:2.375 V ~ 3.465 V 工作温度:-40°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-LBGA,FCBGA 供应商设备封装:16-FCBGA(4x4) 包装:带卷 (TR)
NBSG86AMN 功能描述:逻辑门 2.5V/3.3V SiGe Diff RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量(输入/输出):2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel
NBSG86AMNG 功能描述:逻辑门 2.5V/3.3V SiGe Diff Smart Gate RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量(输入/输出):2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel
NBSG86AMNHTBG 功能描述:逻辑门 BBG SIGE DIF SMRTGTE OUTPUT LEVEL RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量(输入/输出):2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel
NBSG86AMNR2 功能描述:逻辑门 2.5V/3.3V SiGe Diff RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量(输入/输出):2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel