参数资料
型号: NBVSPA013LNHTAG
厂商: ON Semiconductor
文件页数: 4/7页
文件大小: 0K
描述: IC VCXO LVDS 212MHZ 6CLCC
标准包装: 100
系列: PureEdge™
类型: VCXO
频率: 212MHz
电源电压: 2.375 V ~ 2.625 V
电流 - 电源: 75mA
工作温度: -40°C ~ 85°C
封装/外壳: *
包装: *
供应商设备封装: *
安装类型: *
NBVSPA013
http://onsemi.com
4
Table 6. AC CHARACTERISTICS (VDD = 2.5 ±5%, GND = 0 V, TA = 40°C to +85°C) (Note 4)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Unit
fCLKOUT
Output Clock Frequency
NBVSPA013
212.00
MHz
Df
Frequency Stability
(Note 5)
±50
ppm
tjit(f)
RMS Phase Jitter
12 kHz to 20 MHz
0.4
0.9
ps
tjitter
Cycle to Cycle, RMS
1000 Cycles
3
8
ps
Cycle to Cycle, PeaktoPeak
1000 Cycles
15
30
ps
Period, RMS
10,000 Cycles
2
4
ps
Period, PeaktoPeak
10,000 Cycles
10
20
ps
tOE/OD
Output Enable/Disable Time
200
ns
FP
Crystal Pullability (Note 6)
0 V ≤ VC ≤ VDD
±100
ppm
VC(bw)
Control Voltage Bandwidth
3 dB
20
KHz
tDUTY_CYCLE
Output Clock Duty Cycle
(Measured at Cross Point)
45
50
55
%
tR
Output Rise Time (20% and 80%)
245
400
ps
tF
Output Fall Time
(80% and 20%)
245
400
ps
tstart
Startup Time
1
5
ms
Aging
1st Year
3
ppm
Every Year After 1st
1
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Measurement taken with outputs terminated with 100 ohm across differential pair. See Figure 4.
5. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration and first year aging.
6. Gain transfer is positive with a rate of 130 ppm/V.
Table 7. PHASE NOISE PERFORMANCE FOR NBVSPA013
Parameter
Characteristic
Condition
212.00 MHZ
Unit
fNOISE
Output PhaseNoise Performance
100 Hz of Carrier
82
dBc/Hz
1 kHz of Carrier
110
dBc/Hz
10 kHz of Carrier
122
dBc/Hz
100 kHz of Carrier
123
dBc/Hz
1 MHz of Carrier
132
dBc/Hz
10 MHz of Carrier
160
dBc/Hz
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