参数资料
型号: NBXHGA053LNHTAG
厂商: ON Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: IC XO LVPECL 50.0000MHZ 6CLCC
标准包装: 100
系列: PureEdge™
类型: 振荡器 - 晶体
频率: 50MHz
电源电压: 3.135 V ~ 3.465 V
电流 - 电源: 93mA
工作温度: -40°C ~ 85°C
封装/外壳: *
包装: *
供应商设备封装: *
安装类型: *
NBXHGA053
http://onsemi.com
3
Table 5. DC CHARACTERISTICS (VDD = 3.3 V ± 5%, GND = 0 V, TA = 40°C to +85°C) (Note 2)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
IDD
Power Supply Current
93
105
mA
VIH
OE Input HIGH Voltage
2000
VDD
mV
VIL
OE Input LOW Voltage
GND 300
800
mV
IIH
Input HIGH Current
OE
100
+100
mA
IIL
Input LOW Current
OE
100
+100
mA
VOH
Output HIGH Voltage
VDD1195
VDD945
mV
VOL
Output LOW Voltage
VDD1945
VDD1600
mV
VOUTPP
Output Voltage Amplitude
700
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Measurement taken with outputs terminated with 50 W to VDD 2.0 V. See Figure 4.
Table 6. AC CHARACTERISTICS (VDD = 3.3 V ± 5%, GND = 0 V, TA = 40°C to +85°C) (Note 3)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
fCLKOUT
Output Clock Frequency
50.00
MHz
Df
Frequency Stability NBXHGA053
(Note 4)
±50
ppm
FNOISE
PhaseNoise Performance
fCLKout = 50.00 MHz
(See Figure 3)
100 Hz of Carrier
114
dBc/Hz
1 kHz of Carrier
130
dBc/Hz
10 kHz of Carrier
137
dBc/Hz
100 kHz of Carrier
138
dBc/Hz
1 MHz of Carrier
145
dBc/Hz
10 MHz of Carrier
164
dBc/Hz
tjit(F)
RMS Phase Jitter
12 kHz to 20 MHz
0.8
1
ps
tjitter
Cycle to Cycle, RMS
1000 Cycles
1.5
8
ps
Cycle to Cycle, PeaktoPeak
1000 Cycles
15
30
ps
Period, RMS
10,000 Cycles
1
4
ps
Period, PeaktoPeak
10,000 Cycles
10
20
ps
tOE/OD
Output Enable/Disable Time
200
ns
tDUTY_CYCLE
Output Clock Duty Cycle
(Measured at Cross Point)
48
50
52
%
tR
Output Rise Time (20% and 80%)
250
400
ps
tF
Output Fall Time (80% and 20%)
250
400
ps
tstart
Startup Time
1
5
ms
Aging
1st Year
3
ppm
Every Year After 1st
1
ppm
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Measurement taken with outputs terminated with 50 W to VDD 2.0 V. See Figure 4.
4. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration, and first year aging.
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