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| 型号： | NCN5192MNG |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/13页 |
| 文件大小： | 0K |
| 描述： | IC HART MODEM CMOS SGL 32QFN |
| 标准包装： | 1 |
| 系列： | * |
NCN5192
http://onsemi.com
3
Table 2. DC CHARACTERISTICS (VDD = 3.0 V to 5.5 V, VSS = 0 V, TA = 40°C to +85°C)
Symbol
Parameter
VDD
Min
Typ
Max
Units
VDD
DC Supply Voltage
3.0
5.5
V
VIL
Input Voltage, Low
3.0 – 5.5 V
0.3 * VDD
V
VIH
Input Voltage, High
3.0 – 5.5 V
0.7 * VDD
V
VOL
Output Voltage, Low (IOL = 0.67 mA)
3.0 – 5.5 V
0.4
V
VOH
Output Voltage, High (IOH = 0.67 mA)
3.0 – 5.5 V
2.4
V
CIN
Input Capacitance of:
Analog Inputs
RxA
Digital Inputs
2.9
25
3.5
pF
IIL/IIH
Input Leakage Current
±500
nA
IOLL
Output Leakage Current
±10
mA
IDD
Total Power Supply Current
175
350
600
mA
IDDA
Static Analog Supply Current
3.3 V
5.0 V
150
330
370
mA
IDDQ
Static Digital Current
0
30
mA
IDDD
Dynamic Digital Current
5.0 V
25
200
mA
AREF
Analog Reference
3.3 V
5.0 V
1.2
1.235
2.5
2.6
V
CDREF
(Note 2)
Carrier Detect Reference (AREF – 0.08 V)
3.3 V
5.0 V
1.15
2.42
V
CBIAS
Comparator Bias Current
(RBIAS = 500 kW, AREF = 1.235 V)
2.5
mA
2. The HART specification requires carrier detect (CD) to be active between 80 and 120 mVpp. Setting CDREF at AREF 0.08 VDC will set
the carrier detect to a nominal 100 mVpp.
Pin Name
Description
Min
Typ
Max
Units
RxA
Receive analog input
Leakage current
Frequency – mark (logic 1)
Frequency – space (logic 0)
1190
2180
1200
2200
±150
1210
2220
nA
Hz
RxAF
Output of the highpass filter
Slew rate
Gain bandwidth (GBW)
Voltage range
150
0.15
0.025
VDD – 0.15
V/ms
kHz
V
RxAFI
Carrier detect and receive filter input
Leakage current
±500
nA
TxA
Modulator output
Frequency – mark (logic 1)
Frequency – space (logic 0)
Amplitude (IAREF 1.235 V)
Slew Rate mark (logic 1)
Slew Rate space (logic 0)
Loading (IAREF = 1.235 V)
30
1196.9
2194.3
500
1860
3300
Hz
mV
V/s
kW
RxD
Receive digital output
Rise/fall time
20
ns
CD
Carrier detect output
Rise/fall time
20
ns
3. The modulator output frequencies are proportional to the input clock frequency (460.8 kHz/920 kHz/1.8 MHz).
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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