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参数资料
| 型号： | NCN7200MTGEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/10页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL LAN SWITCH NCN7200 |
| 设计资源： | NCN7200MTGEVB Schematic NCN7200MTGEVB BOM NCN7200MTGEVB Gerber Files |
| 标准包装： | 1 |
| 主要目的： | 接口，2:1 多路复用器 |
| 嵌入式： | 否 |
| 已用 IC / 零件： | NCN7200 |
| 主要属性： | 8 通道 |
| 已供物品： | 板 |
| 其它名称： | NCN7200MTGEVBOS |
NCN7200
http://onsemi.com
5
GIGABIT ETHERNET LAN SWITCH WITH 2:1 MUX/ DEMUX AND POWER DOWN FEATURE
(Min / Max values are at VDD = 3.3 V ±10%, TA = 40°C to +85°C. Typ values are at VDD = 3.3 V and TA = 25°C)
Symbol
Unit
Max
Typ
Min
Test Conditions
Description
CONTROL LOGIC (SEL AND PD PINS) DC ELECTRICAL CHARACTERISTICS FOR 1000 BASET ETHERNET SWITCHING
VIH
Input HIGH Voltage
Guaranteed HIGH level
2.0
V
VIL
Input LOW Voltage
Guaranteed LOW level
0.5
0.8
VIK
Clamp Diode Voltage
VDD = Max, IIN = 18 mA
0.7
1.0
IIHSEL
Input HIGH Current (SEL)
VDD = Max, VIN = VDD
±0.1
mA
IIHPD
Input High Current (PD)
VDD = Max, VIN = VDD
±1.2
IIL
Input LOW Current
VDD = Max, VIN = GND
±0.1
IOFF
OffLeakage Current (SEL)
VDD = 0 V, VIN = 0 V to VDD
±0.1
DATA PATH (AX TO BX, CX PINS) DC ELECTRICAL CHARACTERISTICS FOR 1000 BASET ETHERNET SWITCHING
RON
Switch OnResistance (Note 3)
VDD = Min, 1.5 V < VIN < VDD, ITN = 40 mA
2.0
6.0
W
RFLAT(ON)
OnResistance Flatness (Note 3)
VDD = Min, VIN @ 1.5 V and VDD, ITN =
40 mA
0.3
DRON
OnResistance match from center
ports to any other port (Note 3)
VDD = Min, 1.5 V < VIN < VDD, ITN = 40 mA
0.5
1.0
ION
On Leakage Current (AX)
VDD = 3.6 V, VAX = 0 V or VDD, VOUT = Float
0.1
+0.1
mA
IOFF
Off Leakage Current (AX/BX/CX)
VDD = 3.6 V, VIN = 0 V or VDD, VOUT = VDD or
0 V
0.1
+0.1
mA
DATA PATH (LEDAX TO LEDBX, LEDCX PINS) DC ELECTRICAL CHARACTERISTICS FOR 1000 BASET ETHERNET
SWITCHING
RON
Switch OnResistance (Note 3)
VDD = Min, 1.5 V < VIN < VDD, ITN = 40 mA
7.0
16
W
RFLAT(ON)
OnResistance Flatness (Note 3)
VDD = Min, VIN @ 1.5 V and VDD, ITN =
40 mA
0.3
DRON
OnResistance match from center
ports to any other port (Note 3)
VDD = Min, 1.5 V < VIN < VDD, ITN = 40 mA
0.8
1.25
ION
On Leakage Current (LEDAX)
VDD = 3.6 V, VAX = 0 V or VDD, VOUT = Float
0.1
+0.1
mA
IOFF
Off Leakage Current
(LEDAX/LEDBX/LEDCX)
VDD = 3.6 V, VIN = 0 V or VDD, VOUT = VDD or
0 V
0.1
+0.1
mA
CONTROL LOGIC (SEL AND PD PINS) DC ELECTRICAL CHARACTERISTICS FOR 10/100 BASET ETHERNET SWITCHING
VIH
Input HIGH Voltage
Guaranteed HIGH level (Control Pins)
2.0
V
VIL
Input LOW Voltage
Guaranteed LOW level (Control Pins)
0.5
0.8
VIK
Clamp Diode Voltage
VDD = Max, IN = 18 mA
0.7
1.0
IIHSEL
Input HIGH Current (SEL)
VDD = Max, VIN = VDD
±0.1
mA
IIHPD
Input HIGH Current (PD)
VDD = Max, VIN = VDD
±1.2
IIL
Input LOW Current
VDD = Max, VIN = GND
±0.1
IOFF
OffLeakage Current (SEL)
VDD = 0 V, VIN = 0 V to VDD
±0.1
2. Active power represents normal data communication. Standby power is when the device is enabled for operation but there is no LAN traffic
(cable not connected). Power down current is the minimum power state used when not connected and mobile.
3. Measured by the voltage drop between A and B pins at indicated current through the switch. ON resistance is determined by the lower
of the voltages on the two (A & B) pins.
4. Guaranteed by design and/or characterization.
5. The bus switch contributes no propagational delay other than the RC delay of the ON resistance of the switch and the load capacitance.
The time constant for the switch alone is of the order of 0.25 ns for 10 pF load. Since this time constant is much smaller than the rise/fall
times of typical driving signals, it adds very little propagational delay to the system. Propagational delay of the bus switch when used in
a system is determined by the driving circuit on the driving side of the switch and its interactions with the load on the driven side.
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