- 您现在的位置：买卖IC网 > PDF目录19674 > NCP1010ST65T3G (ON Semiconductor)IC OFFLINE SWIT SMPS CM SOT223 PDF资料下载
参数资料
| 型号： | NCP1010ST65T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 18/24页 |
| 文件大小： | 0K |
| 描述： | IC OFFLINE SWIT SMPS CM SOT223 |
| 标准包装： | 1 |
| 输出隔离： | 隔离 |
| 频率范围： | 59kHz ~ 71kHz |
| 输入电压： | 8.5 V ~ 10 V |
| 输出电压： | 700V |
| 功率（瓦特）： | 19W |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 剪切带 (CT) |
| 其它名称： | NCP1010ST65T3GOSCT |
NCP1010, NCP1011, NCP1012, NCP1013, NCP1014
MOSFET Protection
As in any Flyback design, it is important to limit the
drain excursion to a safe value, e.g. below the MOSFET
BV DSS which is 700 V. Figure 27 presents possible
implementations:
HV
HV
HV
Rclamp
Cclamp
D
Dz
D
1
2
8
7
1
2
8
7
1
2
8
7
3
3
3
CVcc
+
4
NCP101X
5
CVcc
C
+
4
NCP101X
5
CVcc
+
4
NCP101X
5
A
B
Figure 27. Different Options to Clamp the Leakage Spike
C
Rclamp =
Lleak · Ip2 · Fsw
Vclamp
Cclamp =
Figure 27A : The simple capacitor limits the voltage
according to Equation 15. This option is only valid for low
power applications, e.g. below 5.0 W, otherwise chances
exist to destroy the MOSFET. After evaluating the leakage
inductance, you can compute C with Equation 15. Typical
values are between 100 pF and up to 470 pF. Large
capacitors increase capacitive losses.
Figure 27B : This diagram illustrates the most standard
circuitry called the RCD network. Rclamp and Cclamp are
calculated using the following formulas:
2 · Vclamp · (Vclamp ? (Vout + Vf sec) · N)
(eq. 27)
(eq. 28)
Vripple · Fsw · Rclamp
Vclamp is usually selected 50--80 V above the reflected
Figure 27C : This option is probably the most expensive of
all three but it offers the best protection degree. If you need
a very precise clamping level, you must implement a Zener
diode or a TVS. There are little technology differences
behind a standard Zener diode and a TVS. However, the die
area is far bigger for a transient suppressor than that of Zener.
A 5.0 W Zener diode like the 1N5388B will accept 180 W
peak power if it lasts less than 8.3 ms. If the peak current in
the worse case (e.g. when the PWM circuit maximum
current limit works) multiplied by the nominal Zener
voltage exceeds these 180 W, then the diode will be
destroyed when the supply experiences overloads. A
transient suppressor like the P6KE200 still dissipates 5.0 W
of continuous power but is able to accept surges up to 600 W
@ 1.0 ms. Select the Zener or TVS clamping level between
40 to 80 V above the reflected output voltage when the
supply is heavily loaded.
value N x (Vout + Vf). The diode needs to be a fast one and
a MUR160 represents a good choice. One major drawback
of the RCD network lies in its dependency upon the peak
current. Worse case occurs when Ip and Vin are maximum
and Vout is close to reach the steady--state value.
http://onsemi.com
18
相关PDF资料 |
PDF描述 |
|---|---|
| 172-015-242R011 | CONN DB15 FEMALE WIRE WRAP TIN |
| V150A3V3E264BG2 | CONVERTER MOD DC/DC 3.3V 264W |
| DEA1X3A220JC1B | CAP CER 22PF 1KV 5% RADIAL |
| M5LV-320/120-20YI | IC CPLD 320MC 120I/O 160PQFP |
| DEA1X3A560JC1B | CAP CER 56PF 1KV 5% RADIAL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP1011 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-Supplied Monolithic Switcher for Low Standby- Power Offline SMPS |
| NCP1011/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Self-Supplied Monolithic Switcher for Low Standby-Power Offline SMPS |
| NCP1011AP065 | 功能描述:交流/直流开关转换器 Low Standby Power RoHS:否 制造商:STMicroelectronics 输出电压:800 V 输入/电源电压（最大值）:23.5 V 输入/电源电压（最小值）:11.5 V 开关频率:115 kHz 电源电流:1.6 mA 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SSO-10 封装:Reel |
| NCP1011AP065G | 功能描述:电流型 PWM 控制器 Low Standby Power Monolithic Switcher RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| NCP1011AP100 | 功能描述:交流/直流开关转换器 Low Standby Power RoHS:否 制造商:STMicroelectronics 输出电压:800 V 输入/电源电压（最大值）:23.5 V 输入/电源电压（最小值）:11.5 V 开关频率:115 kHz 电源电流:1.6 mA 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SSO-10 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。