参数资料
型号: NCP1012AP100
厂商: ON Semiconductor
文件页数: 10/24页
文件大小: 0K
描述: IC OFFLINE SWIT SMPS CM OVP 8DIP
产品变化通告: LTB Notification 03/Jan/2008
标准包装: 50
输出隔离: 隔离
频率范围: 90kHz ~ 110kHz
输入电压: 8.5 V ~ 10 V
输出电压: 700V
功率(瓦特): 19W
工作温度: -40°C ~ 125°C
封装/外壳: 8-DIP(0.300",7.62mm),7 引线
供应商设备封装: 7-PDIP
包装: 管件
其它名称: NCP1012AP100OS
NCP1010, NCP1011, NCP1012, NCP1013, NCP1014
Tsw
1 V Ripple
Tstart
TLatch
Latch--off
Level
Figure 16. NCP101X Facing a Fault Condition (Vin = 150 Vdc)
The rising slope from the latch--off level up to 8.5 V
Vds(t)
is expressed by: Tstart =
. The time during which
.
the IC actually pulses is given by tsw =
Finally, the latch--off time can be derived
Δ V1 · C
IC1
Δ V2 · C
ICC1
Vin
Vr
toff
dt
.
using the same formula topology: TLatch =
Δ V3 · C
ICC2
From these three definitions, the burst duty--cycle
(eq. 2) .
can be computed: dc =
(eq. 3) .
Feeding
the
dc =
ICC1 · ? ICC1 + Δ IC1 + ICC2 ?
Tsw
Tstart + Tsw + TLatch
Δ V2
Δ V2 V1 Δ V3
equation with values extracted from the parameter section
gives a typical duty--cycle of 13%, precluding any lethal
ton
Tsw
Figure 17. A typical drain--ground waveshape
where leakage effects are not accounted for.
t
< Vds(t) >= Vin · (1 ? d) + Vr · toff (eq. 5)
< Vds(t) >= Vin ? Vin · ton + Vr · toff (eq. 6)
toff can be expressed by: toff = Ip ·
(eq. 7) where ton
(eq. 8) .
can be evaluated by: ton = Ip ·
thermal runaway while in a fault condition.
DSS Internal Dissipation
The Dynamic Self--Supplied pulls energy out from the
drain pin. In Flyback--based converters, this drain level can
easily go above 600 V peak and thus increase the stress on the
DSS startup source. However, the drain voltage evolves with
time and its period is small compared to that of the DSS. As
a result, the averaged dissipation, excluding capacitive losses,
can be derived by: PDSS = ICC1 · < Vds(t) > . (eq. 4) .
Figure 17 portrays a typical drain--ground waveshape where
leakage effects have been removed.
By looking at Figure 17, the average result can easily be
derived by additive square area calculation:
Tsw
By developing Equation 5, we obtain:
Tsw Tsw
Lp
Vr
Lp
Vin
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