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参数资料
| 型号： | NCP1012GEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 10/24页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR NCP1012G |
| 设计资源： | NCP1012 Eval Brd BOM NCP1012GEVB Gerber Files NCP1012 Eval Brd Schematic |
| 标准包装： | 1 |
| 主要目的： | AC/DC，主面 |
| 输出及类型： | 1，隔离 |
| 输出电压： | 12V |
| 输入电压： | 230VAC |
| 稳压器拓扑结构： | 回扫 |
| 频率 - 开关： | 100kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCP1012 |
| 其它名称： | NCP1012GEVBOS |
NCP1010, NCP1011, NCP1012, NCP1013, NCP1014
Tsw
1 V Ripple
Tstart
TLatch
Latch--off
Level
Figure 16. NCP101X Facing a Fault Condition (Vin = 150 Vdc)
The rising slope from the latch--off level up to 8.5 V
Vds(t)
is expressed by: Tstart =
. The time during which
.
the IC actually pulses is given by tsw =
Finally, the latch--off time can be derived
Δ V1 · C
IC1
Δ V2 · C
ICC1
Vin
Vr
toff
dt
.
using the same formula topology: TLatch =
Δ V3 · C
ICC2
From these three definitions, the burst duty--cycle
(eq. 2) .
can be computed: dc =
(eq. 3) .
Feeding
the
dc =
ICC1 · ? ICC1 + Δ IC1 + ICC2 ?
Tsw
Tstart + Tsw + TLatch
Δ V2
Δ V2 V1 Δ V3
equation with values extracted from the parameter section
gives a typical duty--cycle of 13%, precluding any lethal
ton
Tsw
Figure 17. A typical drain--ground waveshape
where leakage effects are not accounted for.
t
< Vds(t) >= Vin · (1 ? d) + Vr · toff (eq. 5)
< Vds(t) >= Vin ? Vin · ton + Vr · toff (eq. 6)
toff can be expressed by: toff = Ip ·
(eq. 7) where ton
(eq. 8) .
can be evaluated by: ton = Ip ·
thermal runaway while in a fault condition.
DSS Internal Dissipation
The Dynamic Self--Supplied pulls energy out from the
drain pin. In Flyback--based converters, this drain level can
easily go above 600 V peak and thus increase the stress on the
DSS startup source. However, the drain voltage evolves with
time and its period is small compared to that of the DSS. As
a result, the averaged dissipation, excluding capacitive losses,
can be derived by: PDSS = ICC1 · < Vds(t) > . (eq. 4) .
Figure 17 portrays a typical drain--ground waveshape where
leakage effects have been removed.
By looking at Figure 17, the average result can easily be
derived by additive square area calculation:
Tsw
By developing Equation 5, we obtain:
Tsw Tsw
Lp
Vr
Lp
Vin
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相关代理商/技术参数 |
参数描述 |
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| NCP1012ST100T3 | 功能描述:电流型 PWM 控制器 Low Standby Power RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| NCP1012ST100T3G | 功能描述:电流型 PWM 控制器 Low Standby Power Monolithic Switcher RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| NCP1012ST130T3 | 功能描述:电流型 PWM 控制器 Low Standby Power RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| NCP1012ST130T3G | 功能描述:电流型 PWM 控制器 Low Standby Power Monolithic Switcher RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| NCP1012ST65T3 | 功能描述:电流型 PWM 控制器 Low Standby Power RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
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