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| 型号： | NCP1013AP100 |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/24页 |
| 文件大小： | 0K |
| 描述： | IC OFFLINE SWIT SMPS CM OVP 8DIP |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 50 |
| 输出隔离： | 隔离 |
| 频率范围： | 90kHz ~ 110kHz |
| 输入电压： | 8.1 V ~ 10 V |
| 输出电压： | 700V |
| 功率（瓦特）： | 19W |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-DIP（0.300"，7.62mm），7 引线 |
| 供应商设备封装： | 7-PDIP |
| 包装： | 管件 |
| 其它名称： | NCP1013AP100OS |
NCP1010, NCP1011, NCP1012, NCP1013, NCP1014
ELECTRICAL CHARACTERISTICS (For typical values T J = 25 ? C, for min/max values T J = --40 ? C to +125 ? C, Max T J = 150 ? C,
V CC = 8.0 V unless otherwise noted.)
Rating
Pin
Symbol
Min
Typ
Max
Unit
SUPPLY SECTION AND V CC MANAGEMENT
V CC Increasing Level at which the Current Source Turns--off
V CC Decreasing Level at which the Current Source Turns--on
Hysteresis between VCC OFF and VCC ON
V CC Decreasing Level at which the Latch--off Phase Ends
V CC Decreasing Level at which the Internal Latch is Released
Internal IC Consumption, MOSFET Switching at 65 kHz (Note 2)
Internal IC Consumption, MOSFET Switching at 100 kHz (Note 2)
Internal IC Consumption, MOSFET Switching at 130 kHz (Note 2)
Internal IC Consumption, Latch--off Phase, V CC = 6.0 V
Active Zener Voltage Positive Offset to VCC OFF
1
1
1
1
1
1
1
1
1
1
VCC OFF
VCC ON
--
VCC latch
VCC reset
ICC1
ICC1
ICC1
ICC2
Vclamp
7.9
6.9
--
4.4
--
--
--
--
--
140
8.5
7.5
1.0
4.7
3.0
0.92
0.95
0.98
290
200
9.1
8.1
--
5.1
--
1.1
1.15
1.2
--
300
V
V
V
V
V
mA
mA
mA
m A
mV
Latch--off Current
1
ILatch
mA
NCP1012/13/14
NCP1010/11
0 ? C < T J < 125 ? C
--40 ? C < T J < 125 ? C
0 ? C < T J < 125 ? C
--40 ? C < T J < 125 ? C
6.3
5.8
5.8
5.3
7.4
7.4
7.3
7.3
9.2
9.2
9.0
9.0
POWER SWITCH CIRCUIT
Power Switch Circuit On--state Resistance
NCP1012/13/14 (Id = 50 mA)
T J = 25 ? C
T J = 125 ? C
NCP1010/11 (Id = 50 mA)
T J = 25 ? C
T J = 125 ? C
5
R DSon
--
11
19
22
38
16
24
35
50
Ω
Power Switch Circuit and Startup Breakdown Voltage
5
BVdss
700
--
--
V
(ID (off) = 120 m A, T J = 25 ? C)
Power Switch and Startup Breakdown Voltage Off--state Leakage Current
T J = --40 ? C (Vds = 650 V)
T J = 25 ? C (Vds = 700 V)
T J = 125 ? C (Vds = 700 V)
5
5
5
I DS(OFF )
--
--
--
70
50
30
120
--
--
m A
Switching Characteristics (RL = 50 Ω , Vds Set for Idrain = 0.7 x Ilim)
ns
Turn--on Time (90%--10%)
Turn--off Time (10%--90%)
5
5
ton
toff
--
--
20
10
--
--
INTERNAL STARTUP CURRENT SOURCE
High--voltage Current Source, V CC = 8.0 V
NCP1012/13/14 0 ? C < T J < 125 ? C
--40 ? C < T J < 125 ? C
NCP1010/11 0 ? C < T J < 125 ? C
--40 ? C < T J < 125 ? C
High--voltage Current Source, V CC = 0
1
1
IC1
IC2
5.0
5.0
5.0
5.0
--
8.0
8.0
8.0
8.0
10
10
11
10.3
11.5
--
mA
mA
CURRENT COMPARATOR T J = 25 ? C (Note 2)
Maximum Internal Current Setpoint, NCP1010 (Note 3)
Maximum Internal Current Setpoint, NCP1011 (Note 3)
Maximum Internal Current Setpoint, NCP1012 (Note 3)
Maximum Internal Current Setpoint, NCP1013 (Note 3)
Maximum Internal Current Setpoint, NCP1014 (Note 3)
Default Internal Current Setpoint for Skip--Cycle Operation, Percentage of
Max Ip
Propagation Delay from Current Detection to Drain OFF State
Leading Edge Blanking Duration
5
5
5
5
5
--
--
--
Ipeak (22)
Ipeak (22)
Ipeak (11)
Ipeak (11)
Ipeak (11)
I Lskip
T DEL
T LEB
90
225
225
315
405
--
--
--
100
250
250
350
450
25
125
250
110
275
275
385
495
--
--
--
mA
mA
mA
mA
mA
%
ns
ns
2. See characterization curves for temperature evolution.
3. Adjust di/dt to reach Ipeak in 3.2 m sec.
http://onsemi.com
5
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