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参数资料
| 型号： | NCP1216D65R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/18页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR PWM CM OTP HV 8SOIC |
| 标准包装： | 1 |
| 输出隔离： | 隔离 |
| 频率范围： | 58.5kHz ~ 71.5kHz |
| 输入电压： | 11 V ~ 16 V |
| 工作温度： | 0°C ~ 125°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NCP1216D65R2GOSDKR |
NCP1216, NCP1216A
ELECTRICAL CHARACTERISTICS (For typical values T J = 25 ° C, for min/max values T J = 0 ° C to +125 ° C, Maximum T J = 150 ° C,
V CC = 11 V unless otherwise noted.)
Characteristic
Pin
Symbol
Min
Typ
Max
Unit
DYNAMIC SELF ? SUPPLY
V CC Increasing Level at which the Current Source Turns Off
V CC Decreasing Level at which the Current Source Turns On
V CC Decreasing Level at which the Latchoff Phase Ends
Internal IC Consumption, No Output Load on Pin 5, F SW = 65 kHz
Internal IC Consumption, No Output Load on Pin 5, F SW = 100 kHz
Internal IC Consumption, No Output Load on Pin 5, F SW = 133 kHz
Internal IC Consumption, 1.0 nF Output Load on Pin 5, F SW = 65 kHz
Internal IC Consumption, 1.0 nF Output Load on Pin 5, F SW = 100 kHz
Internal IC Consumption, 1.0 nF Output Load on Pin 5, F SW = 133 kHz
Internal IC Consumption, Latchoff Phase, V CC = 6.0 V
NCP1216
NCP1216A
6
6
6
6
6
6
6
6
6
6
VCC OFF
VCC ON
VCC latch
I CC1
I CC1
I CC1
I CC2
I CC2
I CC2
I CC3
11.2
9.2
12.2
10.0
5.6
990
1025
1060
1.7
2.1
2.4
250
320
13.4
(Note 1)
11.0
(Note 1)
1110
(Note 2)
1180
(Note 2)
1200
(Note 2)
2.0
(Note 2)
2.4
(Note 2)
2.9
(Note 2)
V
V
V
m A
m A
m A
mA
mA
mA
m A
INTERNAL STARTUP CURRENT SOURCE (T J > 0 ° C)
High ? voltage Current Source, V CC = 10 V
High ? voltage Current Source, V CC = 0 V
8
8
IC1
IC2
4.9
(Note 3)
8.0
9.0
11
mA
mA
DRIVE OUTPUT
Output Voltage Rise ? time @ C L = 1.0 nF, 10 ? 90% of a 12 V Output Signal
Output Voltage Fall ? time @ C L = 1.0 nF, 10 ? 90% of a 12 V Output Signal
5
5
T r
T f
60
20
ns
ns
Source Resistance
Sink Resistance
5
5
R OH
R OL
15
5.0
20
10
35
18
W
W
CURRENT COMPARATOR (Pin 5 Unloaded)
Input Bias Current @ 1.0 V Input Level on Pin 3
3
I IB
0.02
m A
Maximum Internal Current Setpoint
Default Internal Current Setpoint for Skip Cycle Operation
Propagation Delay from Current Detection to Gate OFF State
Leading Edge Blanking Duration
3
3
3
3
I Limit
I Lskip
T DEL
T LEB
0.93
1.08
330
80
220
1.14
130
V
mV
ns
ns
1. V CC OFF and V CC ON min ? max always ensure an hysteresis of 2.0 V.
2. Maximum value at T J = 0 ° C.
3. Minimum value for T J = 125 ° C.
http://onsemi.com
4
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