参数资料
| 型号： | NCP1392BDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 14/21页 |
| 文件大小： | 0K |
| 描述： | IC HALF BRIDGE DVR HV OSC 8SOIC |
| 标准包装： | 2,500 |
| 类型： | 半桥 |
| 输入类型： | 非反相 |
| 输出数： | 2 |
| 电流 - 峰值输出： | 1A |
| 电源电压： | 16V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NCP1392B, NCP1392D
V bulk
R upper
BO
+
?
20 m s
Filter
BO_OK to and gates
R lower
I BO
SW
+
?
V refBO
To PFC Delay
High Level for BOdisch time after V CC ON
Figure 30. The internal Brown ? Out Configuration with an Offset Current Sink
A resistive divider made of R upper and R lower , brings a
portion of the HV rail on Pin 3. Below the turn ? on level,
the 18.2 m A current sink (IBO) is on. Therefore, the turn ? on
level is higher than the level given by the division ratio
brought by the resistive divider. To the contrary, when the
IBO is on
internal BO_OK signal is high (PFC timer runs or Mlower
and Mupper pulse), the I BO sink is deactivated. As a result,
it becomes possible to select the turn ? on and turn ? off levels
via a few lines of algebra:
Vref BO + V bulk1 @
R lower
R lower ) R upper
* I BO @
R lower @ R upper
R lower ) R upper
(eq. 1)
IBO is off
Vref BO + V bulk2 @
R lower
R lower ) R upper
(eq. 2)
We can extract R lower from Equation 2 and plug it into Equation 1, then solve for R upper :
R lower + Vref BO @
V bulk1 * V bulk2
I BO @ V bulk2 * Vref BO
(eq. 3)
R upper + R lower @
V bulk2 * Vref BO
Vref BO
(eq. 4)
If we decide to turn ? on our converter for V bulk1 equals 350 V and turn it off for V bulk2 equals 250 V, then for I BO = 18.2 m A
and Vref BO = 1.0 V we obtain:
R upper = 5.494 M W
R lower = 22.066 k W
The bridge power dissipation is 400 2 / 5.517 M W = 29 mW when front ? end PFC stage delivers 400 V. Figure 31 simulation
result confirms our calculations.
http://onsemi.com
14
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