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| 型号： | NCP1582DR2GEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 10/16页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR NCP1582DR2G |
| 产品变化通告： | Product Obsolescence 24/Jan/2011 |
| 设计资源： | NCP1582 EVB BOM NCP1582 EVB Schematic NCP1582DR2GEVB Gerber Files |
| 标准包装： | 1 |
| 主要目的： | DC/DC，步降 |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 0.8V |
| 输入电压： | 4.5 ~ 12 V |
| 稳压器拓扑结构： | 降压 |
| 频率 - 开关： | 350kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCP1582 |
| 其它名称： | NCP1582DR2GEVBOS |
NCP1582, NCP1582A, NCP1583
Where:
Q BG = total lower MOSFET gate charge at V CC .
The junction temperature of the control IC can then be
Open Loop, Unloaded Gain
calculated as:
A
Closed Loop,
Unloaded Gain
F Z F P
Gain = GMR 1 B
Compensation Network
Error Amplifier
TJ + TA ) PIC @ q JA.
Where:
T J = the junction temperature of the IC,
T A = the ambient temperature,
θ JA = the junction ? to ? ambient thermal resistance of the
IC package.
The package thermal resistance can be obtained from the
100 1000 10 k 100 k 1000 k
FREQUENCY (Hz)
Figure 13. Gain Plot of the Error Amplifier
Thermal Considerations
The power dissipation of the NCP158x varies with the
MOSFETs used, V CC , and the boost voltage (V BST ). The
average MOSFET gate current typically dominates the
control IC power dissipation. The IC power dissipation is
determined by the formula:
PIC + (ICC @ VCC) ) PTG ) PBG.
Where:
P IC = control IC power dissipation,
I CC = IC measured supply current,
V CC = IC supply voltage,
P TG = top gate driver losses,
P BG = bottom gate driver losses.
The upper (switching) MOSFET gate driver losses are:
PTG + QTG @ fSW @ VBST.
Where:
Q TG = total upper MOSFET gate charge at V BST ,
f SW = the switching frequency,
V BST = the BST pin voltage.
The lower (synchronous) MOSFET gate driver losses are:
PBG + QBG @ fSW @ VCC.
TG
PHASE
V in
specifications section of this data sheet and a calculation can
be made to determine the IC junction temperature. However,
it should be noted that the physical layout of the board, the
proximity of other heat sources such as MOSFETs and
inductors, and the amount of metal connected to the IC,
impact the temperature of the device. Use these calculations
as a guide, but measurements should be taken in the actual
application.
Layout Considerations
As in any high frequency switching converter, layout is
very important. Switching current from one power device to
another can generate voltage transients across the
impedances of the interconnecting bond wires and circuit
traces. These interconnecting impedances should be
minimized by using wide, short printed circuit traces. The
critical components should be located as close together as
possible using ground plane construction or single point
grounding. The figure below shows the critical power
components of the converter. To minimize the voltage
overshoot the interconnecting wires indicated by heavy
lines should be part of ground or power plane in a printed
circuit board. The components shown in the figure below
should be located as close together as possible. Please note
that the capacitors C IN and C OUT each represent numerous
physical capacitors. It is desirable to locate the NCP158x
within 1 inch of the MOSFETs, Q1 and Q2. The circuit
traces for the MOSFETs’ gate and source connections from
the NCP158x must be sized to handle up to 2 A peak current.
L out
V out
NCP1582
BG
GND
C in
C out
L
C
A
D
RETURN
Figure 14. Components to be Considered for
Layout Specifications
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相关代理商/技术参数 |
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|---|---|
| NCP1583DR2G | 功能描述:电压模式 PWM 控制器 BUCK CONTROLLER RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| NCP1583DR2GEVB | 功能描述:电源管理IC开发工具 ANA SWITCH REG EVAL BOARD RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| NCP1586DR2G | 功能描述:IC REG CTRLR BUCK PWM VM 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:100% 电源电压:8.2 V ~ 30 V 降压:无 升压:无 回扫:是 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:0°C ~ 70°C 封装/外壳:8-DIP（0.300"，7.62mm） 包装:管件 产品目录页面:1316 (CN2011-ZH PDF) |
| NCP1586DR2GH | 制造商:ON Semiconductor 功能描述: |
| NCP1587ADR2G | 功能描述:电压模式 PWM 控制器 BUCK CONTROLLER RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
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