参数资料
| 型号： | NCP1729SN35T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/22页 |
| 文件大小： | 0K |
| 描述： | IC REG SWITCHD CAP INV ADJ 6TSOP |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 1 |
| 类型： | 切换式电容器（充电泵），反相 |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | -1.15 V ~ -5.5 V，2.3 V ~ 11 V |
| 输入电压： | 1.15 V ~ 5.5 V |
| 频率 - 开关： | 35kHz |
| 电流 - 输出： | 50mA |
| 同步整流器： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 包装： | 剪切带 (CT) |
| 供应商设备封装： | 6-TSOP |
| 其它名称： | NCP1729SN35T1OSCT |
NCP1729
MAXIMUM RATINGS*
Rating
Input Voltage Range (V in to GND)
Output Voltage Range (V out to GND)
Output Current
Output Short Circuit Duration (V out to GND)
Operating Junction Temperature
Power Dissipation and Thermal Characteristics
Thermal Resistance, Junction?to?Air
Maximum Power Dissipation @ T A = 70 ° C
Storage Temperature
Symbol
V in
V out
I out
t SC
T J
R q JA
P D
T stg
Value
?0.3 to 6.0
?6.0 to 0.3
100
Indefinite
150
256
313
?55 to 150
Unit
V
V
mA
sec
° C
° C/W
mW
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*ESD Ratings
ESD Machine Model Protection up to 200 V, Class B
ESD Human Body Model Protection up to 2000 V, Class 2
ELECTRICAL CHARACTERISTICS (V in = 5.0 V, C 1 = 3.3 m F, C 2 = 3.3 m F, T A = ?40 ° C to 85 ° C, typical values shown are for
T A = 25 ° C unless otherwise noted. See Figure 14 for Test Setup.)
Characteristic
Operating Supply Voltage Range (SHDN = V in , R L = 10 k)
Supply Current Device Operating (SHDN = 5.0 V, R L = R )
T A = 25 ° C
T A = 85 ° C
Supply Current Device Shutdown (SHDN = 0 V)
T A = 25 ° C
T A = 85 ° C
Oscillator Frequency
T A = 25 ° C
T A = ?40 ° C to 85 ° C
Output Resistance (I out = 25 mA, Note 1)
Voltage Conversion Efficiency (R L = R )
Power Conversion Efficiency (R L = 1.0 k)
Symbol
V in
I in
I SHDN
f OSC
R out
V EFF
P EFF
Min
1.5 to 5.5
?
?
?
?
24.5
19
?
99
?
Typ
1.15 to 6.0
122
128
0.4
1.7
33.5
?
26
99.9
96
Max
?
200
200
?
?
45.6
54
50
?
?
Unit
V
m A
m A
kHz
W
%
%
Shutdown Input Threshold Voltage (V in = 1.5 V to 5.5 V)
V th(SHDN)
V
High State, Device Operating
Low State, Device Shutdown
Shutdown Input Bias Current
?
?
0.6 V in
0.5 V in
?
?
pA
High State, Device Operating, SHDN = 5.0 V
T A = 25 ° C
T A = 85 ° C
Low State, Device Shutdown, SHDN = 0 V
T A = 25 ° C
T A = 85 ° C
I IH
I IL
?
?
?
?
5.0
100
5.0
100
?
?
?
?
Wake?Up Time from Shutdown (R L = 1.0 k)
t WKUP
?
1.0
?
ms
1. Capacitors C 1 and C 2 contribution is approximately 20% of the total output resistance.
http://onsemi.com
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