- 您现在的位置：买卖IC网 > PDF目录17196 > NCP3066SCBSTGEVB (ON Semiconductor)EVAL BOARD FOR NCP3066SCBSTG PDF资料下载
参数资料
| 型号： | NCP3066SCBSTGEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/20页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR NCP3066SCBSTG |
| 设计资源： | NCP3066 Boost SOIC EVB BOM NCP3066SCBSTGEVB Gerber Files NCP3066 Boost SOIC EVB Schematic |
| 标准包装： | 1 |
| 电流 - 输出 / 通道： | 350mA |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 16V |
| 特点： | 亮度控制 |
| 输入电压： | 12V |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCP3066 |
| 其它名称： | NCP3066SCBSTGEVBOS |
NCP3066, NCV3066
MAXIMUM RATINGS (measured vs. Pin 4, unless otherwise noted)
Rating
VCC Pin 6
Comparator Inverting Input Pin 5
Darlington Switch Collector Pin 1
Darlington Switch Emitter Pin 2 (Transistor OFF)
Darlington Switch Collector to Emitter Pins 1 ? 2
Darlington Switch Current
I pk Sense Pin 7
Timing Capacitor Pin Voltage (Pin 3)
Moisture Sensitivity Level
Lead Temperature Soldering
ON/OFF Pin voltage
Symbol
V CC
V CII
V SWC
V SWE
V SWCE
I SW
V IPK
V TC
MSL
T SLD
V ON/OFF
Value
0 to +42
? 0.3 to + V CC
? 0.3 to + 42
? 0.6 to + V CC
? 0.3 to + 42
1.5
? 0.3 to V CC + 0.3
? 0.2 to +1.4
1
260
( ? 0.3 to +25) < V CC
Unit
V
V
V
V
V
A
V
V
?
° C
V
POWER DISSIPATION AND THERMAL CHARACTERISTICS
PDIP ? 8 (Note 5)
Thermal Resistance Junction ? to ? Air
SOIC ? 8 (Note 5)
Thermal Resistance Junction ? to ? Air
DFN ? 8 (Note 5)
Thermal Resistance Junction ? to ? Air
Thermal Resistance Junction ? to ? Case
Storage Temperature Range
Maximum Junction Temperature
Operating Junction Temperature Range (Note 3)
NCP3066
NCV3066
R q JA
R q JA
R q JA
R q JC
T STG
T JMAX
T J
100
180
78
14
? 65 to +150
+150
0 to +85
? 40 to +125
° C/W
° C/W
° C/W
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Pin 1 ? 8: Human Body Model 2000 V per AEC Q100 ? 002; 003 or JESD22/A114; A115
Machine Model Method 200 V
2. This device contains latch ? up protection and exceeds 100 mA per JEDEC Standard JESD78.
3. The relation between junction temperature, ambient temperature and Total Power dissipated in IC is T J = T A + R q ? P D .
4. The pins which are not defined may not be loaded by external signals.
5. 35 m m copper, 10 cm 2 copper area.
http://onsemi.com
3
相关PDF资料 |
PDF描述 |
|---|---|
| T95S225M020HSSL | CAP TANT 2.2UF 20V 20% 1507 |
| EYM08DTAD | CONN EDGECARD 16POS R/A .156 SLD |
| HER302GA-G | RECTIFIER HI-EFF 3A 100V DO-27 |
| HER301GA-G | RECTIFIER HI-EFF 3A 50V DO-27 |
| REC5-2415SRW/H6/A | CONV DC/DC 5W 18-36VIN 15VOUT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP308MT090TBG | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NCP308MT120TBG | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NCP308MT125TBG | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NCP308MT150TBG | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NCP308MT180TBG | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。