参数资料
| 型号： | NCP347MTAETBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 10/13页 |
| 文件大小： | 0K |
| 描述： | IC OVERVOLTAGE PROT CTRLR 10WDFN |
| 标准包装： | 3,000 |
| 电压 - 工作： | 1.2 ~ 28V |
| 电压 - 箝位： | 7V |
| 技术： | 混合技术 |
| 电路数： | 3 |
| 应用： | 通用 |
| 封装/外壳： | 10-WFDFN 裸露焊盘 |
| 供应商设备封装： | 10-WDFN（2.5x2） |
| 包装： | 带卷 (TR) |
NCP347
Undervoltage Lockout (UVLO)
To ensure proper operation under any conditions, the
device has a built ? in undervoltage lockout (UVLO) circuit.
During V in positive going slope, the output remains
disconnected from input until V in voltage is below 2.92 V,
plus hysteresis, nominal. The FLAG output is tied to low as
long as V in does not reach UVLO threshold. This circuit has
a 60 mV hysteresis to provide noise immunity to transient
condition. Additional UVLO thresholds ranging from
UVLO can be manufactured. (See Selection Guide on page
12) Contact your ON Semiconductor representative for
availability.
Overvoltage Lockout (OVLO)
To protect connected systems on V out pin from
overvoltage, the device has a built ? in overvoltage lockout
(OVLO) circuit. During overvoltage condition, the output
remains disabled as long as the input voltage exceeds
5.675 V typical (NCP347MTAE). Additional OVLO
thresholds ranging from OVLO can be manufactured. (See
Selection Guide on page 12) Contact your ON
Semiconductor representative for availability.
FLAG output is tied to low until V in is higher than OVLO.
This circuit has a 90 mV hysteresis to provide noise
immunity to transient conditions .
FLAG Output
The NCP347 provides a FLAG output, which alerts
external systems that a fault has occurred.
This pin is tied to low as soon the OVLO threshold is
exceeded or when the V in level is below the UVLO
threshold. When V in level recovers normal condition,
FLAG is held high, keeping in mind that an additional
50 ms delay has been added between available output and
FLAG = high. The pin is an open drain output, thus a pull
up resistor (typically 1 M W , minimum 10 k W ) must be
added to V bat . Minimum V bat supply must be 2.5 V. The
FLAG level will always reflects V in status, even if the
device is turned off (EN = 1).
EN Input
To enable normal operation, the EN pin shall be forced
to low or connected to ground. A high level on the pin,
disconnects OUT pin from IN pin. EN does not overdrive
an OVLO or UVLO fault.
Internal NMOS FET
The NCP347 includes an internal Low R DS(on) NMOS
FET to protect the systems, connected on OUT pin, from
positive overvoltage. Regarding electrical characteristics,
the R DS(on) , during normal operation, will create low losses
on V out pin.
As example: R load = 8.0 W , V in = 5.0 V
Typical R DS(on) = 65 m W, I out = 618 mA
V out = 8 x 0.618 = 4.95 V
NMOS losses = R DS(on) x Iout 2 = 0.065 x 0.618 2 = 25 mW
ESD Tests
The NCP347 input pin fully supports the IEC61000 ? 4 ? 2.
1.0 m F (minimum) must be connected between V in and
GND, close to the device.
That means, in Air condition, V in has a " 15 kV ESD
protected input. In Contact condition, V in has " 8.0 kV
ESD protected input.
Please refer to Figure 19 to see the IEC 61000 ? 4 ? 2
electrostatic discharge waveform.
Figure 19. Electrostatic Discharge Waveform
PCB Recommendations
The NCP347 integrates a 2 amperes rated NMOS FET,
and the PCB rules must be respected to properly evacuate
the heat out of the silicon. The PAD1 is internally isolated
from the active silicon and should preferably be connected
to ground. The PAD2 of the NCP347 package is connected
to the internal NMOS drain and can be used to increase the
heat transfer if necessary from an applications standpoint.
Depending upon the power dissipated in the application,
one can either use the PCB tracks connected to Pins 4 and
5 to evacuate heat, or make profit of the PAD2 area to add
extra copper surface to reduce the junction temperature
(See Figure 20). Of course, in any case, this pad shall be not
connected to any other potential. Figure 20 shows copper
area according to R q JA and allows the design of the heat
transfer plane connected to PAD2.
http://onsemi.com
10
相关PDF资料 |
PDF描述 |
|---|---|
| T11-211NR-1 | CIRCUIT BRKR SP RESET 1A SCREW |
| NCP360SNAIT1G | IC CTLR USB POS OVP PMOSF 5TSOP |
| T11-818-7.5 | CIRCUIT BRKR THERMAL 7.5A 1POLE |
| T11-818-1.5-181 | CIRCUIT BRKR THERMAL 1.5A 1POLE |
| NCP361SNT1G | IC USB POS OVP/OCP 5TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP347MTAFTBG | 功能描述:电池管理 OVER VLTG PROTECTION RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| NCP347MTAHTBG | 功能描述:电池管理 OVER VLTG PROTECTION RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| NCP347MTAITBG | 功能描述:电池管理 OVER VLTG PROTECTION RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| NCP3488DR2G | 功能描述:功率驱动器IC ANA 12V MOSFET DR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP348AEMTTBG | 功能描述:监控电路 POS OVERVLTG PROTECT CONTROLLER RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。