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参数资料
| 型号： | NCP3521DMR2GEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/10页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR NCP3521DMR2G |
| 设计资源： | NCP3521 Eval Brd BOM NCP3521DMR2GEVB Gerber Files NCP3520/21 Eval Brd Schematic |
| 标准包装： | 1 |
| 每 IC 通道数： | 1 - 单 |
| 输出电压： | 1.5V |
| 电流 - 输出： | 3A |
| 输入电压： | 4.5 ~ 5.5 V |
| 稳压器类型： | 正，固定式 |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCP3521 |
| 其它名称： | NCP3521DMR2GEVBOS |
NCP3520/NCP3521
DETAILED OPERATING DESCRIPTION
T + C(NRCS) * V FB INRCS
General
The NCP3520/NCP3521 are LDO Regulator Controllers.
An external NFET device sets the current capability
allowing for designer selection.
Features include an undervoltage lockout for both the
integrated circuit supply Pin VCC, and the supply pin for the
external FET connection to the drain of the FET.
The NRCS (Non Rush Current on Startup) feature
prevents high currents through the external FET
(drain-source). The external capacitor setting component
used in NRCS is also used for short circuit protection (SCP).
The device also has an enable feature allowing it to go into
a low supply current sleep mode demanded by most modern
day feature rich systems when not in use.
Thermal shutdown functionality protects the IC from
damage caused from excessively high temperatures
appearing on the IC.
Output Driver
Output current drive capability is determined by the
designer's choice of external MOSFET (NFET). Power
dissipated in the driver can be controlled by the voltage
applied to V D . V D should be kept low to minimize power
dissipation and high enough to support regulated operation
at the desired output current. It should also be noted the
output capacitor (V O to GND) value supports regulation
during high speed transient events until the system loop can
respond to any voltage dips to drive the external FET.
High Speed Control
Unlike most linear regulators whose reaction to
overvoltage events is to turn off the upper driver and let the
external load and resistor feedback network quench the
incident, the NCP3520/21 include a 1.2 mA pulldown
through the VS Pin. This keeps overshoot to a minimum
during powerup. During turn-off and thermal overload, the
pulldown current is increased from 1.2 mA to 220 mA to
provide an even faster turn-off time.
Power On Reset
A 50 m s power on reset circuit is built into the IC acting as
a digital filter and performing housekeeping activity during
a short circuit event.
The timer effects three areas of operation.
1. EN turn on delay. Upon detection of an EN high,
there is a 50 m s delay to when the internal circuitry
turns on and the gate pin (G) goes high. A low on
EN resets the timer.
2. V CC startup delay. If V CC drops out below the
undervoltage lockout voltage and restored above
its hysteresis value, a 50 m s time is also observed
from reinitiation of V CC and G going high. This is
3. Device startup into a short circuit. Further details
are available on this subject under the heading
“Starting Up Into A Short Circuit”.
Normal Powerup/Down
The NRCS (Non Rush Current on Startup) timer controls
the output driver during powerup. The output driver voltage
(V G ) is controlled during powerup. The voltage on NRCS is
mimicked to provide a duplicate voltage on VFB. When
1.2 V is reached normal operation of the error amplifier and
feedback network take over. Regulation is maintained in the
loop around 1.2 V. The NRCS pin rises up to 1 V. At 1 V, the
NRCS capacitor is discharged fully at a 300 m A (min) rate.
The IC enters a standby mode capable of short circuit
detection.
A 20 m A pullup current source is used to charge the
external NRCS capacitor linearly and maintain a predictable
powerup. A recommended 0.01 m F will provide a 325 m s
powerup time. Alternative times can be programmed with
this equation:
(eq. 1)
Rush current during startup can be calculated by
I = C OUT * V O / T.
The NRCS circuit is not active during powerdown.
Normal circuit operation will be maintained unless
VCC_UVLO or VD_UVLO cause the gate drive output to
turn off.
3V
EN
1.2 V
VS / VFB
1.0 V
0.65 V
NRCS
50 m s Error amplifier A standby mode for
takes control here. short circuit is
entered here.
Figure 13. Powerup (NCP3520 (1.2 V) Version Shown)
recognized to be different from the EN turn on
delay by the active circuitry of the voltage
reference, NRCS circuitry, and V S high current
pulldown.
http://onsemi.com
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| NCP360MUTXG | 功能描述:监控电路 USB POS OVP PMOSFET AND STATUS FLAG RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NCP360SNAET1G | 功能描述:监控电路 USB OVP SUPERVISORY RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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