参数资料
| 型号： | NCP4300ADR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP/VOLT REF DUAL 8SOIC |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 |
| 标准包装： | 2,500 |
| 放大器类型： | 通用 |
| 电路数： | 2 |
| 转换速率： | 0.5 V/µs |
| 增益带宽积： | 700kHz |
| 电流 - 输入偏压： | 50nA |
| 电压 - 输入偏移： | 500µV |
| 电流 - 电源： | 420µA |
| 电流 - 输出 / 通道： | 25mA |
| 电压 - 电源，单路/双路(±)： | 3 V ~ 35 V |
| 工作温度： | 0°C ~ 105°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NCP4300ADR2OS |
NCP4300A
http://onsemi.com
2
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage (VCC to GND)
VCC
36
V
ESD Protection Voltage at any Pin (Human Body Model)
VESD
2.0 K (min)
V
OpAmp 1 and 2 Input Voltage Range (Pins 2, 5, 6)
VIR
0.6 to VCC +0.6
V
OpAmp 2 Input Differential Voltage Range (Pins 5, 6)
VIDR
VCC to GND
V
Voltage Reference Cathode Current (Pin 3)
IK
100
mA
Maximum Junction Temperature
TJ
150
°C
Operating Ambient Temperature Range
TA
0 to 105
°C
Storage Temperature Range
Tstg
55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance, JunctiontoAmbient
RqJA
155
°C/W
Thermal Resistance, JunctiontoCase
RqJC
45
°C/W
TYPICAL ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Total Supply Current, excluding Current in the Voltage Reference
VCC = 5.0 V, no load; 0°C v TA v 105°C
ICC
0.42
0.8
mA
OpAmp 1 (Opamp with noninverting input connected to the internal Vref)
(VCC = 5.0 V, Vout = 1.4 V, TA = 25°C, unless otherwise noted)
Input Offset Voltage
TA = 25°C
TA = 0°C to 105°C
VIO
0.5
2.0
3.0
mV
Input Offset Voltage Temperature Coefficient
TA = 0°C to 105°C
DVIO/DT
7.0
mV/°C
Input Bias Current (Inverting input only)
TA = 25°C
TA = 0°C to 105°C
IIB
50
150
nA
Large Signal Voltage Gain (VCC = 15 V, RL = 2.0 kW, Vout = 1.4 V to 11.4 V)
TA = 25°C
TA = 0°C to 105°C
AVOL
50
25
100
V/mV
Power Supply Rejection (VCC = 5.0 V to 30 V)
PSRR
40
90
dB
Output Source Current (VCC = 15 V, Vout = 2.0 V, VID = +1.0 V)
IO+
10
16
mA
Output Sink Current (VCC = 15 V, Vout = 2.0 V, VID = 1.0 V)
IO
10
25
mA
Output Voltage Swing, High (VCC = 30 V, RL = 10 kW, VID = +1.0 V)
TA = 25°C
TA = 0°C to 105°C
VOH
27
28
V
Output Voltage Swing, Low (RL = 10 kW, VID = 1.0 V)
TA = 25°C
TA = 0°C to 105°C
VOL
17
100
mV
Slew Rate (Vin = 0.5 to 2.0 V, VCC = 15 V, RL = 2.0 kW, Av = 1.0, CL = 100 pF)
SR
0.3
0.5
V/ms
Unity Gain Bandwidth (VCC = 30 V, RL = 2.0 kW, CL = 100 pF, Vin = 0.5 Vpp @
f = 70 kHz)
BW
0.3
0.7
MHz
Total Harmonic Distortion (f = 1.0 kHz, AV = 10, RL = 2.0 kW, VCC = 30 V,
Vout = 2.0 VPP)
THD
0.02
%
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