参数资料
型号: NCP4302ADR2G
厂商: ON Semiconductor
文件页数: 2/16页
文件大小: 0K
描述: IC REG CTRLR FLYBK ISO PWM 8SOIC
标准包装: 1
PWM 型: 控制器
输出数: 1
频率 - 最大: 250kHz
电源电压: 9.2 V ~ 28 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 125°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 标准包装
产品目录页面: 1127 (CN2011-ZH PDF)
其它名称: NCP4302ADR2GOSDKR
NCP4302
PIN DESCRIPTION
Pin
Number
1
2
3
4
5
6
7
8
Symbol
SYNC/CS
TRIG
CATH
V REF
D LYADJ
GND
DRV
V CC
Description
Connected to the flyback winding. The current on this pin is sensed and used to turn on the Synchronous
Rectification MOSFET (SRFET). This pin is also used to sense the zero crossing of the MOSFET current
either using the R DS(on) of the SRFET or using an external current sense resistor connected between
drain of the SRFET and the flyback winding.
Input pin for direct turn ? off of the MOSFET. Typically connected to a signal from primary controller (for
CCM mode) or a signal derived from the transformer (for QR mode). Has very short propagation delay to
output (<50 ns).
Feedback compensation pin for the TL431 shunt regulator. Has the capability to sinking 10 ma of opto
current.
Output voltage feedback through resistive divider connected to this pin. Regulated at 1.28 V (option B) or
2.55 V (option A).
A resistive divider between the power supply output and ground with the center point tied to the D LYADJ
input pin allows for independent adjustment of the minimum t on and t off delay time. The maximum extern-
al capacitance from this pin to ground is 25 pF.
Return pin for the controller – connected to the output return.
Drive output for external MOSFET – 2.5 A peak drive capability, internally clamped to 13.5 V (Maximum)
Bias voltage for the controller. Maximum voltage is 28 V.
MAXIMUM RATINGS
Rating
Power Supply Input
Current
Drive Voltage
Current
Drive Current
Source
Sink
Analog and Logic Inputs
Maximum Voltage
Current
Operating Junction Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10 s)
Reference input Current, continuous
Total Power Dissipation
Thermal Resistance Junction ? to ? Ambient
Symbol
V CC
I CC
V DRV
I DRV
TRIG, V REF ,
D LYADJ
SYNC/CS
T J
T Jmax
T Smax
T Lmax
I REF
P D
q JA
Value
? 0.3 to 28
100
? 0.3 to 18
100
2.5
? 2.5
? 0.3 to 10
100
? 10 to 95
100
? 40 to 125
150
? 65 to 150
300
? 0.05 to 10
225
178
Unit
V
mA
V
mA
Apk
V
mA
V
mA
° C
° C
° C
° C
mA
mW
° C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Pin 1 ? 8: Human Body Model 2000 V per Mil ? Std ? 883, Method 3015.
Machine Model Method 200 V
2. This device contains Latch ? up protection and exceeds ± 100 ma per JEDEC Standard JESD78
http://onsemi.com
2
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