参数资料
| 型号： | NCP4672DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3.5V/1.8V 8SOIC |
| 标准包装： | 2,500 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 3.5V，1.8V |
| 输入电压： | 3.8 V ~ 16 V |
| 电压 - 压降（标准）： | 0.15V @ 20mA |
| 稳压器数量： | 2 |
| 电流 - 输出： | 20mA（最小值），70mA（最小值） |
| 电流 - 限制（最小）： | 30mA，80mA |
| 工作温度： | -30°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NCP4672DR2GOS |
NCP4672
ELECTRICAL CHARACTERISTICS (C in = 0.1 m F Ceramic, C out = 4.7 m F with ESR = 0.1 ? 5.0 W , V in = 12 V, T A = 25 ° C)
Characteristics
Symbol
Min
Typ
Max
Unit
Output Voltage
V adj
V
V out1 (V in = 4.5 V, I out1 = 20 mA)
V out2 (V in = 4.5 V, I out2 = 40 mA)
Line Regulation
V out1 (V in = 4.5 V , I out1 = 20 mA)
V out2 (V in = 4.5 V to 10 V, I out2 = 40 mA)
Load Regulation
V out1 (V in = 4.5 V, I out1 = 0.1 mA to 20 mA)
V out2 (V in = 4.5 V, I out2 = 0.1 mA to 70 mA)
Dropout Voltage
V out1 (V in = 3.3 V, I out1 = 20 mA)
Ground Pin Current
(V in = 8.0 V, I out1 = I out2 = 0 mA)
(V in = 2.7 V, I out1 = I out2 = 0 mA, Rpu = infinite)
Short Current Limit
V out1
V out2
Reg line
Reg load
V in ? V out1
I GND
I SC
3.43
1.764
?
?
?
?
?
?
?
30
80
3.5
1.8
3.0
3.0
3.0
2.0
150
1.0
3.0
60
150
3.57
1.836
30
30
40
40
300
2.0
?
?
?
mV
mV
mV
mA
mA
Thermal Shutdown
?
165
?
° C
Temperature Coefficient
V out1 (T J = ?30 to 85 ° C, V in = 4.5 V, I out1 = 20 mA)
V out2 (T J = ?30 to 85 ° C, V in = 4.5 V, I out2 = 40 mA)
T C
?
?
100
100
?
?
ppm/ ° C
Ripple Rejection (Note 6)
R R
dB
V out1 (V in = 4.5 V, V ripple = 1.0 V, I out1 = 20 mA, 120 Hz)
V out2 (V in = 4.5 V, V ripple = 1.0 V, I out2 = 40 mA, 120 Hz)
?
?
65
70
?
?
Output Noise Voltage
V out1 (V in = 4.5 V, f = 20 Hz ? 80 kHz, I out1 = 20 mA)
V out2 (V in = 4.5 V, f = 20 Hz ? 80 kHz, I out2 = 40 mA)
V n
?
?
80
50
?
?
m V rms
V in Detect
Detecting Voltage L (V in = H to L)
Detecting Voltage H (V in = L to H)
Hysteresis Voltage (V in = H to L to H)
V SLin Temperature Coefficient (T J = ?30 ° C to +85 ° C)
Low?Level Output Voltage (V in = 6.0 V, Vt1 = 5.0 V, Rt1 = 10 k W ) (Note 5)
Threshold Operating Voltage (V OPLin = Vt1 = 1.0 V)
V SLin
V SHin
D V Sin
V Slin T C
V OLin1
V OLin2
6.72
?
140
?
?
?
7.0
7.35
350
100
100
?
7.28
?
560
?
200
0.4
V
V
mV
ppm/ ° C
mV
V
V out Detect
Detecting Voltage L (V in = H to L)
Detecting Voltage H (V in = L to H)
Hysteresis Voltage (V in = H to L to H)
V SLin Temperature Coefficient (T J = ?30 ° C to +85 ° C)
Low?Level Output Voltage (V out1 = 2.6 V)
Threshold Operating Voltage (V OPLout = 0.85 V)
Reset Delay Time (C D = 10 nF)
“L” Transmission Delay Time (C D = 10 nF)
V SLout
V SHout
D V Sout
V SLin T C
V OLout1
V OLout2
t PLH
t PHL
2.78
?
25
?
?
?
5
?
2.9
2.95
50
100
100
?
10
30
3.020
?
100
?
200
0.4
15
90
V
V
mV
ppm/ ° C
mV
V
ms
m s
3. The maximum package power dissipation is: PD + J(max)
2. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL?STD?883, Method 3015
Machine Model Method 200 V.
T * TA
R q JA
4. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Refer to Figure 3.
6. Guaranteed by design.
http://onsemi.com
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