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参数资料
| 型号： | NCP4894FCEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 16/19页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR NCP4894FC |
| 设计资源： | NCP4894 Demo Board BOM NCP4894FCEVB Gerber Files NCP4894 Demo Board Schematic |
| 标准包装： | 1 |
| 放大器类型： | AB 类 |
| 输出类型： | 1-通道（单声道） |
| 在某负载时最大输出功率 x 通道数量： | 1.8W x 1 @ 8 欧姆 |
| 电源电压： | 2.2 V ~ 5.5 V |
| 板类型： | 完全填充 |
| 已用 IC / 零件： | NCP4894 |
| 已供物品： | 板 |
| 其它名称： | NCP4894FCEVBOS |
NCP4894
http://onsemi.com
6
ELECTRICAL CHARACTERISTICS Limits apply for TA between 40°C to +85°C (Unless otherwise noted).
Characteristic
Symbol
Conditions
Min
(Note 8)
Typ
Max
(Note 8)
Unit
Supply Quiescent Current
Idd
VP = 3.0 V, No Load
VP = 5.0 V, No Load
1.9
2.1
mA
VP = 3.0 V, 8.0
W
VP = 5.0 V, 8.0
W
2.0
2.2
4.0
Common Mode Voltage
Vcm
VP/2
V
Shutdown Current
ISD
For VP between 2.2 V to 5.5 V
SDM = SDS = GND
TA = 25°C
TA = 40°C to +85°C
20
600
2.0
nA
mA
SD SELECT Threshold High
VSDIH
1.4
V
SD SELECT Threshold Low
VSDIL
0.4
V
Turning On Time (Note 10)
TWU
Cby = 1.0 mF
140
ms
Turning Off Time (Note 10)
TSD
20
ms
Output Swing
Vloadpeak
VP = 3.0 V, RL = 8.0 W
2.5
V
TA = 25°C
TA = 40°C to +85°C
4.0
3.85
4.3
V
Rms Output Power
PO
VP = 3.0 V, RL = 8.0 W
THD + N < 0.1%
VP = 3.3 V, RL = 8.0 W
THD + N < 0.1%
VP = 5.0 V, RL = 8.0 W
THD + N < 0.1%
0.39
0.48
1.08
W
Output Offset Voltage
VOS
For VP between 2.2 V
to 5.5 V
30
1.0
30
mV
Power Supply Rejection Ratio
PSRR V+
G = 2.0, RL = 8.0 W
VPripple_pp = 200 mV
Cby = 1.0 mF
Input Terminated with 10
W
F = 217 Hz
VP = 5.0 V
VP = 3.0 V
F = 1.0 kHz
VP = 5.0 V
VP = 3.0 V
80
85
dB
Efficiency
h
VP = 3.0 V, Porms = 380 mW
VP = 5.0 V, Porms = 1.0 W
64
63
%
Thermal Shutdown Temperature
Tsd
160
°C
Total Harmonic Distortion
THD
VP = 3.0 V, F = 1.0 kHz
RL = 8.0 W, AV = 2.0
PO = 0.32 W
VP = 5.0 V, F = 1.0 kHz
RL = 8.0 W, AV = 2.0
PO = 1.0 W
0.007
0.006
%
8. Min/Max limits are guaranteed by design, test or statistical analysis.
9. This parameter is not tested in production for 9Pin FlipChip CSP package in case of a 5.0 V power supply, however it is correlated based
on a 3.0 V power supply testing.
10. See page 12 for a theoretical approach of these parameters.
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