参数资料
型号: NCP5010FCT1G
厂商: ON Semiconductor
文件页数: 3/18页
文件大小: 0K
描述: IC LED DRVR WHT BCKLT 8-FLIPCHIP
产品变化通告: Product Discontinuation 01/Oct/2008
标准包装: 3,000
恒定电流:
拓扑: PWM,升压(升压)
输出数: 1
内部驱动器:
类型 - 主要: 背光
类型 - 次要: OLED,白色 LED
频率: 800kHz ~ 1.2MHz
电源电压: 2.7 V ~ 5.5 V
输出电压: 20V
安装类型: 表面贴装
封装/外壳: 8-UFBGA,FCBGA
供应商设备封装: 8-覆晶
包装: 带卷 (TR)
工作温度: -40°C ~ 85°C
NCP5010
MAXIMUM RATINGS
Rating
Power Supply Voltage (Note 2)
Over Voltage Protection
Human Body Model (HBM) ESD Rating (Note 3)
Machine Model (MM) ESD Rating (Note 3)
Digital Input Voltage
Digital Input Current
Power Dissipation @ T A = +85 ° C
Thermal Resistance Junction?to?Air
8?Pin Flip?Chip Package
Operating Ambient Temperature Range
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V IN
V OUT
ESD HBM
ESD MM
CTRL
P D
R q JA
T A
T J
T stg
Value
7.0
24
2000
200
?0.3 < V IN < V bat +0.3
1.0
150
(Note 6)
?40 to +85
?40 to +125
?65 to +150
Unit
V
V
V
V
V
mA
mW
° C/W
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at T A = 25 ° C.
2. According to JEDEC standard JESD22?A108B.
3. This device series contains ESD protection and passes the following tests:
Human Body Model (HBM) ± 2.0 kV per JEDEC standard: JESD22?A114 for all pins.
Machine Model (MM) ± 200 V per JEDEC standard: JESD22?A115 for all pins.
4. Latchup Current Maximum Rating: ± 100 mA per JEDEC standard: JESD78.
5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J?STD?020A.
6. For the 8?Pin Flip?Chip CSP Package, the R q JA is highly dependent on the PCB Heatsink area. For example R q JA can be to 195 ° C/W with
50 mm total area and also 135 ° C/W with 500 mm. All the bumps have the same thermal resistance and need to be connected thereby optimizing
the power dissipation.
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