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参数资料
| 型号： | NCP5212TMNTXG |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/19页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM 16-QFN |
| 标准包装： | 3,000 |
| PWM 型： | 电流/电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 330kHz |
| 电源电压： | 4.5 V ~ 27 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 16-VQFN 裸露焊盘 |
| 包装： | 带卷 (TR) |
NCP5212A, NCP5212T
PIN FUNCTION DESCRIPTION
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
Symbol
VIN
VCC
SYN
EN
COMP
FB
IDRP/OCP
CS ? /Vo
CS+
PGND
DL/TRESET
VCCP
BST
DH
SWN
PGOOD
TPAD
Description
Input voltage used for feed forward in switcher operation.
Supply for analog circuit
Synchronization interleaving use.
This pin serves as two functions. Enable: Logic control for enabling the switcher. MASTER/SLAVE: To
program the device as MASTER or SLAVE mode at dual device operation.
Output of the error amplifier.
Output voltage feed back.
Current limit programmable and setting for AVP.
Inductor current differential sense inverting input.
Inductor current differential sense non ? inverting input.
Ground reference and high ? current return path for the bottom gate driver.
Gate driver output of bottom N ? channel MOSFET. It also has the function for TRE threshold setting.
Supply for bottom gate driver.
Top gate driver input supply, a bootstrap capacitor connection between SWN and this pin.
Gate driver output of top N ? channel MOSFET.
Switch node between top MOSFET and bottom MOSFET.
Power good indicator of the output voltage. High impendence if power good (in regulation). Low im-
pendence if power not good.
Copper pad on bottom of IC used for heat sinking. This pin should be connected to the analog ground
plane under the IC.
ABSOLUTE MAXIMUM RATINGS
Rating
VCC Power Supply Voltage to AGND
VIN Supply to AGND
High ? side Gate Drive Supply: BST to SWN
High ? side Gate Drive Voltage: DH to SWN
Low ? side Gate Drive Supply: VCCP to PGND
Low ? side Gate Drive Voltage: DL to PGND
Input / Output Pins to AGND
Switch Node SWN ? PGND
High ? Side Gate Drive/Low ? Side Gate Drive Outputs
PGND
Thermal Characteristics
Thermal Resistance Junction ? to ? Ambient (QFN16 Package)
Operating Junction Temperature Range (Note 1)
Operating Ambient Temperature Range
Storage Temperature Range
Moisture Sensitivity Level
Symbol
V CC
V IN
V BST ? V SWN,
V DH ? V SWN,
V CCP ? V PGND,
V DL ? V PGND,
V IO
V SWN
DH, DL
V PGND
R q JA
T J
T A
T stg
MSL
Value
? 0.3, 6.0
? 0.3, 30
? 0.3, 6.0
? 0.3, 6.0
? 5 V (< 100 ns)
30 V
? 3(DC)
? 0.3, 0.3
48
? 40 to + 150
? 40 to + 85
? 55 to +150
1
Unit
V
V
V
V
V
V
V
° C/W
° C
° C
° C
?
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.
1. Internally limited by thermal shutdown, 150 ° C min.
http://onsemi.com
5
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