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参数资料
| 型号： | NCP5222GEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/28页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL NCP5222 SYNC BUCK |
| 设计资源： | NCP5222GEVB Schematic NCP5222GEVB Test Procedure NCP5222GEVB Bill of Materials NCP5222GEVB Gerber Zip |
| 标准包装： | 1 |
| 主要目的： | DC/DC，步降 |
| 输出及类型： | 2，非隔离 |
| 输出电压： | 1.05V，1.05V |
| 电流 - 输出： | 18A，18A |
| 稳压器拓扑结构： | 降压 |
| 频率 - 开关： | 300kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCP5222 |
| 其它名称： | NCP5222GEVB-ND-ND NCP5222GEVBOSOS |
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NCP5222
MAXIMUM RATINGS
Value
Rating
Power Supply Voltages to AGND
High ? Side Gate Driver Supplies: BST1 to SWN1, BST2 to SWN2
High ? Side Gate Driver Voltages: DH1 to SWN1, DH2 to SWN2
Input Supply Voltage Sense Input to AGND
Switch Nodes
High ? Side Gate Drive Outputs
Low ? Side Gate Drive Outputs
Feedback Input to AGND
Error Amplifier Output to AGND
Current Sharing Output to AGND
Current Sense Input to AGND
Mode Program I/O to PGND1
Enable Input to AGND
Power Good Output to AGND
PGND1, PGND2 to AGND
Operating Junction Temperature Range
Operating Ambient Temperature Range
Storage Temperature Range
Symbol
V CC , V CCP
V BST1 ? V SWN1 ,
V BST2 ? V SWN2 ,
V DH1 ? V SWN1 ,
V DH2 ? V SWN2
V IN
V SWN1 , V SWN2
V DH1 , V DH2
V DL1 , V DL2
V FB1 , V FB2
V COMP1 , V COMP2
V ICS1 , V ICS2
V CS1+ , V CS1 ? , V CS2+ ,
V CS2 ?
V DRVS
V EN1 , V EN2
V PGOOD1 , V PGOOD2
V GND
T J
T A
T STG
MIN
? 0.3
? 0.3
? 0.3
? 0.3,
? 5 (<100 ns)
? 0.3,
? 5 (<100 ns)
? 0.3,
? 5 (<100 ns)
? 0.3
? 0.3
? 0.3
? 0.3
? 0.3
? 0.3
? 0.3
? 0.3
? 40
? 40
? 55
MAX
6.0
6.0
30
30
36
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
0.3
150
85
150
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
° C
° C
° C
Thermal Characteristics Thermal Resistance Junction to Air (Pad
soldered to PCB)
Moisture Sensitivity Level
R q JA
MSL
45 (Note 1)
1
° C/W
?
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Directly soldered on 4 layer PCB with thermal vias, thermal resistance from junction to ambient with no airflow is around 40~45 ° C/W (depends
on filled vias or not). Directly soldered on 4 layer PCB without thermal vias, thermal resistance from junction to ambient with no air flow is
around 56 ° C/W.
2. This device is sensitive to electrostatic discharge. Follow proper handing procedures.
ELECTRICAL CHARACTERISTICS (V CC = 5 V, V IN = 12 V, T A = ? 40 ° C to 85 ° C, unless other noted)
Characteristics
Symbol
Test Conditions
Min
Typ
Max
Unit
SUPPLY VOLTAGE
Input Voltage
V CC Operating Voltage
V CCP Operating Voltage
V IN
V CC
V CCP
4.5
4.5
4.5
?
5.0
5.0
27
5.5
5.5
V
V
V
SUPPLY CURRENT
V CC Quiescent Supply Current in
FPWM operation
IVCC_FPWM
EN1 = EN2 = 1.95 V, FB1
and FB2 forced above
regulation point, DH1, DL1,
DH2, and DL2 are open
2.5
5
mA
3. Guaranteed by design, not tested in production.
http://onsemi.com
6
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